Substrate provided with transparent conductive film for photoelectric conversion device, method for manufacturing the substrate, and photoelectric conversion device using the substrate
View Patent ↗Provided in this invention is a low-cost substrate provided with a transparent conductive film for photoelectric conversion device, which can improve performance of the photoelectric conversion device by enhanced light confinement effect achieved with effectively increased surface unevenness of the substrate. A method for manufacturing said substrate and a photoelectric conversion device using said substrate which can show improved performance are also provided. The substrate provided with the transparent conductive film for the photoelectric conversion device comprises a transparent insulating substrate and a transparent electrode layer containing at least zinc oxide deposited on the transparent insulating substrate, wherein the transparent electrode layer is composed of a double layer structure wherein first and second transparent conductive films are deposited in this order from a substrate side. The transparent conductive film has an average film thickness of 10-500 nm, and the second transparent conductive film has an average film thickness of 300-1,500 nm. The average film thickness of the second transparent conductive film is larger than that of the first transparent conductive film, and an average height difference of the unevenness on the surface of the second transparent conductive film is 10-300 nm, which is larger than that of the first transparent conductive film.
1. A method of manufacturing a photoelectric conversion device comprising:
providing a substrate with a transparent electrode layer; and
forming at least one photoelectric conversion unit and a back electrode layer on the transparent electrode layer, arranged in this order from a light incident side,
wherein the substrate provided with the transparent electrode layer comprises a transparent insulating substrate and the transparent electrode layer directly deposited on a photoelectric conversion unit-side of the transparent insulating substrate,
wherein the transparent electrode layer is composed of a double layer structure wherein first and second transparent conductive films, each consisting essentially of zinc oxide and containing a dopant, are deposited from a substrate side; the first transparent conductive film has an average film thickness of 10 to 500 nm, and the second transparent conductive film has an average film thickness of 300 to 1500 nm; the average film thickness of the second transparent conductive film is larger than the average film thickness of the first transparent conductive film; and an average height difference of an unevenness on a surface of the second transparent conductive film is 10 to 300 nm, and the average height difference of the unevenness on the surface thereof is larger than that of the first transparent conductive film,
wherein forming the transparent electrode layer further comprises:
depositing the first transparent conductive film by a sputtering method; and
depositing the second transparent conductive film by a low-pressure CVD method.
2. The method of manufacturing a photoelectric conversion device according to claim 1 , wherein the substrate with the transparent electrode layer has a haze ratio of 20% or more, the haze ratio being a ratio of a diffusion light transmittance to a total light transmittance as measured by using a C light source or a D65 light source.
3. A method of manufacturing an integrated-type photoelectric conversion device comprising:
providing a substrate with a transparent electrode layer; and
forming at least one crystalline photoelectric conversion unit and a back electrode layer on the transparent electrode layer, arranged in this order from a light incident side,
wherein the photoelectric conversion unit and the back electrode layer are separated by a plurality of separation grooves so as to form a plurality of photoelectric conversion cells, and the plurality of these photoelectric conversion cells are electrically connected with each other in series via a plurality of connection grooves,
wherein the substrate with the transparent electrode layer comprises a transparent insulating substrate and the transparent electrode layer directly deposited on a photoelectric conversion unit-side of the transparent insulating substrate,
wherein the transparent electrode layer is composed of a double layer structure wherein first and second transparent conductive films, each consisting essentially of zinc oxide and containing a dopant, are deposited from a substrate side; the first transparent conductive film has an average film thickness of 10 to 500 nm, and the second transparent conductive film has an average film thickness of 300 nm to 1500 nm; the average film thickness of the second transparent conductive film is larger than the average film thickness of the first transparent conductive film; and an average height difference of an unevenness on a surface of the second transparent conductive film is 10 to 300 nm, and the average height difference of the unevenness on the surface of the second transparent conductive film is larger than that of the first transparent conductive film,
wherein forming the transparent electrode layer further comprises:
depositing the first transparent conductive film by a sputtering method; and
depositing the second transparent conductive film by a low-pressure CVD method.
4. The method of claim 1 , wherein the dopant contained in the first transparent conductive film includes Aluminum.
5. The method of claim 1 , wherein the dopant contained in the second transparent conductive film includes Boron.
6. The method of claim 1 , wherein the first transparent conductive film is deposited to have an average film thickness of 30 nm or more.