Semiconductive polyolefin composition
View Patent ↗The present invention relates to a semiconductive polyolefin composition comprising: (i) up to 80 wt. % of a polyolefin (I), (ii) carbon black, and (iii) optionally up to 60 wt. % of a polymer (II) having a melting point of not less than 100° C., wherein the polyolefin (I) has a co-monomer content of equal to or less than 4.3 mol %, to the use of that composition for the production of a power cable and to a power cable comprising that composition.
1. A semiconductive polyolefin composition comprising:
(i) up to 80 wt. % of a polyolefin (I),
(ii) carbon black, and
(iii) up to 60 wt. % of a polymer (II) having a melting point of not less than 100° C.,
wherein the polyolefin (I) comprises
a terpolymer,
which has a content of polar group containing comonomer of 3.5 mol % or less, or 2.5 mol % or less, and
a content of silane group containing comonomer of 0.7 mol % or less, 0.5 mol % or less, or 0.4 mol % or less,
provided that the total comonomer content of polyolefin (I) is 3.5 mol % or less or 2.5 mol % or less.
2. The semiconductive polyolefin composition according to claim 1 , wherein the polyolefin (I) has a degree of crystallinity of not less than 27%.
3. The semiconductive polyolefin composition according to claim 1 , wherein polyolefin (I) is present in an amount of 40 to 60 wt. %.
4. The semiconductive polyolefin composition according to claim 1 wherein polymer (II) is present in an amount of 5 to 40 wt. %.
5. The semiconductive polyolefin composition according to claim 1 , wherein polymer (II) has a melting point in the range of from 100 to 170° C. or from 110 to 135° C.
6. The semiconductive polyolefin composition according to claim 1 , wherein the polyolefin (I) is a high pressure low density ethylene (LDPE) terpolymer.
7. The semiconductive polyolefin composition according to claim 1 , wherein the polar co-monomer is selected from the group consisting of acrylate and acetate co-monomers.
8. The semiconductive polyolefin composition according to claim 1 , wherein the silane-group containing co-monomer is selected from the group consisting of vinyl tri-alkoxy silanes.
9. The semiconductive polyolefin composition according to claim 1 , wherein the polymer (II) is selected from the group consisting of polyethylenes, polypropylenes or polybutylenes.
10. The semiconductive polyolefin composition according to claim 9 , wherein the polymer (II) is a homopolymer, a random copolymer or a heterophasic copolymer of propylene.
11. A power cable comprising at least one semiconductive layer comprising a semiconductive polyolefin composition according to claim 1 .
12. The power cable according to claim 11 , which is a medium voltage power cable.
13. A power cable comprising a conductor, a first semi-conductive layer (a), an insulation layer (b) and a second semiconductive layer (c) each coated on the conductor in this order, wherein at least one of the first and second semiconductive layer(s) (a;c) comprises a semiconductive polyolefin composition according to claim 1 .
14. The power cable according to claim 13 , wherein the first (a) and the second (c) semiconductive layer is cross-linked.
15. The power cable according to claim 13 , wherein the second semiconductive layer (c) is non-strippable from the insulation layer.
16. The power cable according to claim 13 , which is a medium voltage power cable.
17. A process for producing a power cable comprising a conductor, a first semiconductive layer (a), an insulation layer (b) and a second semiconductive layer (c) each coated on the conductor in this order, comprising the steps of:
(i) providing the semiconductive polyolefin composition according to claim 1 , by blending the polyolefin (I), carbon black and, optionally, the polymer (II) together, optionally with additives, at a temperature above melting point of the polymer components,
(ii) co-extruding the melt at elevated temperature above the melting point of the polymer components, together with the polymer melt for any of the other layers, on a conductor for forming a layered power cable structure, and
(iii) winding the obtained layered power cable onto a cable drum.
18. The process according to claim 17 , wherein the power cable comprises at least one cross-linkable layer, a cross-linkable insulation layer (b) and a cross-linkable second semiconductive layer (c).
19. The process according to claim 17 , wherein the power cable is further subjected to a cross-linking step at elevated temperature.
20. The process according to claim 19 , wherein the cross-linking step is effected at a cross-linking temperature of not less than 75° C.
21. The process according to claim 17 , wherein the cross-linking step includes a steam or water treatment.
22. The process according to claim 17 , wherein the power cable comprises at least a cross-linkable first semiconductive layer (a), a cross-linkable insulation layer (b) and a cross-linkable second semiconductive layer (c).