Organic thin film transistor and organic thin film transistor manufacturing process

1. An organic thin film transistor comprising a substrate and provided thereon, a source electrode, a drain electrode, an organic semiconductor connecting the source electrode and the drain electrode, a gate electrode, and an insulating layer composed of a plurality of layers, the insulating layer being provided between the gate electrode and the organic semiconductor, wherein the organic thin film transistor comprises a mercapto group-containing compound represented by the following formula (I),

(R) n —Si(A) 3-n -(B)  Formula (I)

wherein R represents an alkyl group having a carbon atom number of not more than 8; A represents an alkoxy group or a halogen atom; B represents a substituent containing an SH group; and n is an integer of from 0 to 2, and wherein the substituent represented by B in formula (I) has a triazine ring.

2. The organic thin film transistor of claim 1 , further comprising a pixel electrode and/or a contact electrode, wherein at least one electrode selected from the pixel electrode, the source electrode, the drain electrode, the gate electrode and the contact electrode is formed from a layer composed of the mercapto group-containing compound and a layer composed of a metal.

3. The organic thin film transistor of claim 1 , wherein the organic semiconductor contains a compound having a partial structure represented by the following formula (1),

wherein R represents a substituent.

4. A process for manufacturing an organic thin film transistor comprising a substrate and provided thereon, a source electrode, a drain electrode, an organic semiconductor connecting the source electrode and the drain electrode, a gate electrode, and an insulating layer composed of a plurality of layers, the insulating layer being provided between the gate electrode and the organic semiconductor, the process comprising the step of bringing a base material into contact with a solution containing a mercapto group-containing compound represented by the following formula (I) to form a layer containing the mercapto group-containing compound where the compound combines with the base material through a siloxane bond,

(R) n —Si(A) 3-n -(B)  Formula (I)

wherein R represents an alkyl group having a carbon atom number of not more than 8; A represents an alkoxy group or a halogen atom; B represents a substituent containing an SH group; and n is an integer of from 0 to 2 and

exposing to light the layer containing the mercapto group-containing compound to form first areas capable of combining with a metal and second areas incapable of combining with a metal, the first and second areas being separated from each other.

5. The process for manufacturing an organic thin film transistor of claim 4 , wherein the first areas have on the surface an —SH group, and the second areas have on the surface an —S—S— bond.

6. The process for manufacturing an organic thin film transistor of claim 4 , the process further comprising the step of bringing the exposed layer into contact with a solution containing a metal to combine the metal with the first areas capable of combining with a metal.

7. The process for manufacturing an organic thin film transistor of claim 4 , the process further comprising the step of bringing the exposed layer into contact with a solution containing a metal, followed by plating treatment, whereby a plating film is formed at the exposed portions.

8. An organic thin film transistor manufactured according to the process for manufacturing an organic thin film transistor of claim 4 .