HEMT semiconductor component with field plates
A transistor in which the electric field is reduced in critical areas using field plates, permitting the electric field to be more uniformly distributed along the component, is provided, wherein the electric field in the active region is smoothed and field peaks are reduced. The semiconductor component has a substrate with an active layer structure, a source contact and a drain contact located on said active layer structure. The source contact and the drain contact are mutually spaced and at least one part of a gate contact is provided on the active layer structure in the region between the source contact and the drain contact, a gate field plate being electrically connected to the gate contact. In addition, at least two separate field plates are placed directly on the active layer structure or directly on a passivation layer.
1. A semiconductor component, comprising:
a substrate with an active layer structure disposed thereon, comprising at least one layer made of a semiconducting material, a source contact and a drain contact being disposed on the active layer structure and the source contact and the drain contact being spaced apart from each other,
a gate contact, at least a part of the gate contact being disposed on the active layer structure in an area between the source contact and the drain contact,
a gate field plate electrically connected to a gate electric potential of the gate contact and disposed directly on a passivation layer disposed on the active layer structure, and
at least two separate field plates of which at least one separate field plate is disposed directly on the active layer structure, wherein the passivation layer is patterned accordingly.
2. The semiconductor component according to claim 1 ,
wherein the at least one separate field plate is at least one of at least two field plates formed in a stripe shape and parallel to each other.
3. The semiconductor component according to one of claims 1 and 2 , wherein
the active layer structure has a first layer made of a first semiconducting material and a second layer made of a second semiconducting material, and the band gap of the first semiconducting material is different from the band gap of the second semiconducting material and/or the spontaneous or piezoelectric polarization of the first semiconducting material is different from the spontaneous or piezoelectric polarization of the second semiconducting material, and the first semiconducting material and the second semiconducting material are chosen such that a two-dimensional electron gas forms in a boundary layer between the first layer and the second layer.
4. The semiconductor component according to one of claims 1 and 2 , wherein
the at least one other separate field plate of the at least two separate field plates is connected to the drain potential or is connected to the source potential.
5. The semiconductor component according to one of claims 1 and 2 , wherein
the at least one separate field plate is disposed unearthed directly on the active layer structure.
6. The semiconductor component according to one of claims 1 and 2 , wherein
the gate field plate and the at least one separate field plate are coated with a protective film.