Semiconductor nanowire and its manufacturing method
View Patent ↗A method for fabricating a semiconductor nanowire that has first and second regions is provided. A catalyst particle is put on a substrate. A first source gas is introduced, thereby growing the first region from the catalyst particle via a vapor-liquid-solid phase growth. A protective coating is formed on a sidewall of the first region, and a second source gas is introduced to grow the second region extending from the first region via the liquid-solid-phase growth.
1. A method for fabricating a semiconductor nanowire that has first and second regions, the method comprising:
putting a catalyst particle on a substrate;
growing the first region from the catalyst particle with a vapor-liquid-solid phase (VLS) grower;
forming a protective coating on a sidewall of the first region; and
growing the second region extending from the first region with the VLS grower.
2. The method of claim 1 , wherein a conductivity type of the first region is one of N and P types and a conductivity type of the second region is an other of N and P types.
3. The method of claim 1 , wherein a conductivity type of the first region is the same as a conductivity type of the second region, and wherein an electrical conductivity of the second region is lower than an electrical conductivity of the first region.
4. The method of claim 1 , wherein the catalyst particle comprises one of a metal and an alloy of a metal and further comprises a semiconductor.
5. The method of claim 1 , wherein the second region comprises a semiconductor material doped with a dopant element.
6. The method of claim 5 , wherein at a growth temperature of the second region, a solid solubility of the dopant element with respect to the catalyst particle is at most 1×10 19 atoms/cm 3 .
7. The method of claim 6 , wherein the first and second regions comprise a semiconductor material that includes at least one element selected from a group consisting of Si, Ge and C.
8. The method of claim 5 , wherein the dopant element comprises at least one element selected from a group consisting of B, P, As and Sb.
9. The method of claim 1 , wherein, when growing the second region, a constituent element of the second region diffuses through the protective coating and does not diffuse to the first region.
10. The method of claim 9 , wherein the protective coating includes at least one film selected from a group consisting of a silicon dioxide film, a silicon oxynitride film and a silicon nitride film.
11. The method of claim 1 , wherein a bandgap of the first region is different from a bandgap of the second region.
12. The method of claim 11 , wherein the second region comprises at least two different elements and wherein at a growth temperature of the second region, a solid solubility of at least one of the at least two different elements of the second region with respect to the catalyst particle is at most 1×10 19 atoms/cm 3 .
13. The method of claim 1 , wherein the protective coating is formed by thermally oxidizing the first region.
14. A semiconductor nanowire comprising:
a first region including a dopant in a concentration of at least 1×10 19 atoms/cm 3 ;
a second region, arranged continuously with the first region in a longitudinal direction thereof and including one of a first dopant in a concentration of at most 1×10 18 atoms/cm 3 and no dopant; and
a third region arranged continuously with the second region in the longitudinal direction thereof and including a second dopant in a concentration of at least 1×10 19 atoms/cm 3 .
15. A semiconductor device with the semiconductor nanowire of claim 14 , comprising:
a source electrode connected to the first region of the semiconductor nanowire;
a drain electrode connected to the third region of the semiconductor nanowire;
a gate electrode facing the second region of the semiconductor nanowire; and
a gate insulating film arranged between the second region and the gate electrode.
16. A semiconductor nanowire, comprising:
a first region including a dopant;
a second region having a lower dopant concentration than the first region and arranged continuously with the first region in a longitudinal direction thereof;
a third region, which has having a higher dopant concentration than the second region and arranged continuously with the second region in the longitudinal direction thereof;
a first sidewall arranged on a side surface of the first region and including a first polycrystalline material; and
a second sidewall arranged on a side surface of the third region and including a second polycrystalline material,
wherein the first sidewall and the second sidewall are not arranged on a side surface of the second region.
17. The semiconductor nanowire of claim 16 , wherein a thickness of the first sidewall and a thickness of the second sidewall one of increase and decrease in a direction extending toward the second region.
18. A semiconductor device with the semiconductor nanowire of claim 16 , the device comprising:
a source electrode connected to the first region of the semiconductor nanowire;
a drain electrode connected to the third region of the semiconductor nanowire;
a gate electrode facing the second region of the semiconductor nanowire; and
a gate insulating film arranged between the second region and the gate electrode.