Semiconductor device
View Patent ↗Power amplifier circuits which constitute an RF power module used for a digital device capable of handling high frequency signals in two frequency bands are disposed over the same IC chip. The power amplifier circuits are disposed around the IC chip, and a secondary circuit is disposed between the power amplifier circuits. Thus, the power amplifier circuits are provided within the same IC chip to enable a size reduction. Further, the distance between the power amplifier circuits is ensured even if the power amplifier circuits are provided within the same IC chip. It is therefore possible to suppress the coupling between the power amplifier circuits and restrain crosstalk between the power amplifier circuits.
1. An RF power module including a module board and a semiconductor chip mounted over the module board, the semiconductor chip including:
a first amplifier circuit comprised of three amplifying stages electrically coupled in series,
the first amplifier circuit having a first input terminal and a first output terminal;
a second amplifier circuit comprised of three amplifying stages electrically coupled in series,
the second amplifier circuit having a second input terminal and a second output terminal; and
a control circuit controlling the first and second amplifier circuits,
wherein the control circuit is located between the first amplifier circuit and the second amplifier circuit.
2. An RF power module according to claim 1 ,
wherein each of the first and second amplifier circuits is disposed in a peripheral region of the semiconductor chip.
3. An RF power module according to claim 1 ,
wherein the semiconductor chip has a quadrilateral shape in plan view, with a pair of sides,
wherein the first amplifier circuit is disposed along one of the pair of sides, and
wherein the second amplifier circuit is disposed along another one of the pair of sides.
4. An RF power module according to claim 1 ,
wherein the semiconductor chip has a rectangular shape in plan view, with a pair of long sides and a pair of short sides,
wherein the first amplifier circuit is disposed along one of the long sides, and
wherein the second amplifier circuit is disposed along another one of the long sides.
5. An RF power module according to claim 1 ,
wherein the semiconductor chip is comprised of a semiconductor substrate of silicon.
6. An RF power module according to claim 1 ,
wherein each of the three amplifying stages of the first and second amplifier circuits is comprised of a MOSFET.
7. An RF power module according to claim 6 ,
wherein each of the three amplifying stages of the first and second amplifier circuits is comprised of a laterally diffused MOSFET.
8. An RF power module according to claim 1 ,
wherein the control circuit includes a bias voltage generating circuit which supplies bias voltages to each of the three amplifying stages of the first amplifier circuit and each of the three amplifying stages of the second amplifier circuit.
9. An RF power module according to claim 1 ,
wherein each of the three amplifying stages of the first and second amplifier circuits is comprised of a MOSFET, and
wherein the control circuit includes a bias voltage generating circuit which supplies a gate bias voltage to each of the three amplifying stages of the first and second amplifier circuits.
10. An RF power module according to claim 1 ,
wherein the semiconductor chip includes a first inter-stage matching circuit and a second inter-stage matching circuit,
wherein the first inter-stage matching circuit is electrically coupled to one of the three amplifying stages in the first amplifier circuit and another one of the three amplifying stages in the first amplifier circuit, and
wherein the second inter-stage matching circuit is electrically coupled to one of the three amplifying stages in the second amplifier circuit and another one of the three amplifying stages in the second amplifier circuit.
11. An RF power module according to claim 10 ,
wherein each of the first and second inter-stage matching circuits includes a capacitor.
12. An RF power module according to claim 1 ,
wherein the first amplifier circuit amplifies a first signal,
wherein the second amplifier circuit amplifies a second signal, and
wherein a frequency of the first signal is higher than that of the second signal.
13. An RF power module according to claim 1 ,
wherein the module board has a top surface and a bottom surface opposite to the top surface,
wherein the semiconductor chip is mounted over the top surface,
wherein a plurality of electrodes are disposed over the bottom surface, and
wherein each of the first and second input terminals and the first and second output terminals is electrically coupled to each one of the plurality of electrodes.
14. An RF power module according to claim 13 ,
wherein an encapsulating member covers the semiconductor chip and the top surface of the module board.
15. An RF power module including a module board and a semiconductor chip mounted over the module board, the semiconductor chip including:
a first amplifier circuit comprised of three amplifying stages electrically coupled in series,
the first amplifier circuit having a first input terminal and a first output terminal;
a second amplifier circuit comprised of three amplifying stages electrically coupled in series,
the second amplifier circuit having a second input terminal and a second output terminal; and
a control circuit controlling the first and second amplifier circuits,
wherein the semiconductor chip is comprised of a semiconductor substrate of silicon,
wherein each of the three amplifying stages of the first and second amplifier circuits is comprised of a MOSFET,
wherein the first amplifier circuit and the amplifier circuit amplify a first signal and a second signal, respectively,
wherein a frequency of the first signal is higher than that of the second signal,
wherein the control circuit includes a bias voltage generating circuit which supplies a gate bias voltage to each of the three amplifying stages of the first and second amplifier circuits,
wherein the semiconductor chip has a quadrilateral shape in plan view, with a pair of sides,
wherein the first amplifier circuit is disposed along one of the pair of sides,
wherein the second amplifier circuit is disposed along another one of the pair of sides, and
wherein the control circuit is located between the first amplifier circuit and the second amplifier circuit.
16. An RF power module according to claim 15 ,
wherein the semiconductor chip includes a first inter-stage matching circuit and a second inter-stage matching circuit,
wherein the first inter-stage matching circuit is electrically coupled to one of the three amplifying stages in the first amplifier circuit and another one of the three amplifying stages in the first amplifier circuit, and
wherein the second inter-stage matching circuit is electrically coupled to one of three amplifying stages in the second amplifier circuit and another one of the three amplifying stages in the second amplifier circuit.
17. An RF power module according to claim 16 ,
wherein each of the first and second inter-stage matching circuits includes a capacitor.
18. An RF power module according to claim 15 ,
wherein the module board has a top surface and a bottom surface opposite to the top surface,
wherein the semiconductor chip is mounted over the top surface,
wherein a plurality of electrodes are disposed over the bottom surface, and
wherein each of the first and second input terminals and the first and second output terminals is electrically coupled to each one of the plurality of electrodes.
19. An RF power module according to claim 18 ,
wherein an encapsulating member covers the semiconductor chip and the top surface of the module board.