Semiconductor integrated circuit device
View Patent ↗Circuit elements and wirings constituting a circuit, and first electrodes electrically connected to such a circuit are provided on one main surface of a semiconductor substrate. An organic insulating film is formed on the circuit except for openings on the surfaces of the first electrodes. First and second external connecting electrodes are provided on the organic insulating film. At least one conductive layer for electrically connecting the first and second external connecting electrodes and the first electrodes is placed on the organic insulating film.
1. A semiconductor integrated circuit device comprising:
a semiconductor substrate;
circuit elements and wirings which are provided on one main surface of the semiconductor substrate and constitute a semiconductor integrated circuit;
a first pad electrode and a second pad electrode provided over the one main surface and electrically connected to the circuit;
a protective film provided over the circuit except for openings over surfaces of the first and second pad electrodes;
an organic insulating film provided over the protective film except for the openings; and
a first conductive layer provided over the organic insulating film and providing a direct electrical connection from the first pad electrode to the second pad electrode.
2. The semiconductor integrated circuit device according to claim 1 , wherein the conductive layer is a rewiring.
3. The semiconductor integrated circuit device according to claim 1 , further comprising:
a third pad electrode provided over the one main surface; and
a second conductive layer, for electrically connecting to an external terminal, provided over the organic insulating film and electrically connected to the third pad electrode.
4. The semiconductor integrated circuit device according to claim 3 , wherein the external terminal is a bump electrode.
5. The semiconductor integrated circuit device according to claim 1 , wherein the first pad electrode and the second pad electrode are respectively bonding pads.
6. The semiconductor integrated circuit device according to claim 3 , wherein the first and second pad electrodes are respectively set larger than the external terminal in area.
7. The semiconductor integrated circuit device according to claim 1 , wherein the second pad electrode is electrically connect to the third pad electrode.
8. The semiconductor integrated circuit device according to claim 1 , wherein the first conductive layer does not directly contact with an external terminal.
9. The semiconductor integrated circuit device according to claim 1 , wherein the protective film includes a silicon nitride film.
10. The semiconductor integrated circuit device according to claim 1 , wherein the second conductive layer includes a copper film having a thickness greater than a thickness of the first and second pad electrodes.
11. A semiconductor integrated circuit device comprising:
a semiconductor substrate;
circuit elements and wirings which are provided on one main surface of the semiconductor substrate and constitute a semiconductor integrated circuit;
a first insulating film provided over the circuit elements and the wirings;
a first pad electrode and a second pad electrode provided over the first insulating film and electrically connected to the circuit;
a protective film provided over the circuit except for openings over surfaces of the first and second pad electrodes;
a second insulating film provided over the protective film except for the openings; and
a first conductive layer provided over the second insulating film and providing a direct electrical connection from the first pad electrode to the second pad electrode.
12. The semiconductor integrated circuit device according to claim 11 , further comprising:
a third pad electrode provided over the first insulating film; and
a second conductive layer, for electrically connecting to an external terminal, provided over the second insulating film and electrically connected to the third pad electrode.
13. The semiconductor integrated circuit device according to claim 12 , wherein the external terminal is a bump electrode.
14. The semiconductor integrated circuit device according to claim 11 , wherein the first pad electrode and the second pad electrode are respectively bonding pads.
15. The semiconductor integrated circuit device according to claim 12 ,
wherein the first and second pad electrodes are respectively set larger than the external terminal in area.
16. The semiconductor integrated circuit device according to claim 11 , wherein the second pad electrode is electrically connect to the third pad electrode.
17. The semiconductor integrated circuit device according to claim 11 , wherein the first conductive layer does not directly contact with an external terminal.
18. The semiconductor integrated circuit device according to claim 11 , wherein the protective film includes a silicon nitride film.
19. A semiconductor integrated circuit device comprising:
a semiconductor substrate;
circuit elements and wirings which are provided on one main surface of the semiconductor substrate and constitute a semiconductor integrated circuit;
a first insulating film provided over the circuit elements and the wirings;
a first pad electrode and a second pad electrode provided over the first insulating film and electrically connected to the circuit;
a protective film provided over the circuit except for openings over surfaces of the first and second pad electrodes; and
a first conductive layer provided over the protective film and providing a direct electrical connection from the first pad electrode to the second pad electrode.
20. The semiconductor integrated circuit device according to claim 19 , further comprising:
a third pad electrode provided over the first insulating film; and
a second conductive layer, for electrically connecting to an external terminal, provided over the protective film and electrically connected to the third pad electrode.
21. The semiconductor integrated circuit device according to claim 20 , wherein external terminal is a bump electrode.
22. The semiconductor integrated circuit device according to claim 19 , wherein the first pad electrode and the second pad electrode are respectively bonding pads.
23. The semiconductor integrated circuit device according to claim 20 , wherein the first and second pad electrodes are respectively set larger than the external terminal in area.
24. The semiconductor integrated circuit device according to claim 19 , wherein the second pad electrode is electrically connect to the third pad electrode.
25. The semiconductor integrated circuit device according to claim 19 , wherein the first conductive layer does not directly contact with an external terminal.
26. The semiconductor integrated circuit device according to claim 19 , wherein the protective film includes a silicon nitride film.
27. The semiconductor integrated circuit device according to claim 19 , wherein the second conductive layer includes a copper film having a thickness greater than a thickness of the first and second pad electrodes.
28. The semiconductor integrated circuit device according to claim 11 , wherein the second conductive layer includes a copper film having a thickness greater than a thickness of the first and second pad electrodes.