Thin film transistor, method of fabricating the same, and organic light emitting diode display device including the same
View Patent ↗A thin film transistor, a method of fabricating the same, and an organic light emitting diode display device including the same, which allow a size of a grain of a channel region to be increased, can effectively protect the channel region of a semiconductor layer at the time of etching process, and can reduce processing cost. The thin film transistor includes a substrate, a gate electrode disposed on the substrate, a gate insulating layer disposed on the gate electrode, a semiconductor layer pattern disposed on the gate insulating layer and including a channel region, a source region and a drain region, an etch stop layer pattern disposed on the channel region of the semiconductor layer pattern and having a thickness of 20 to 60 nm, and source and drain electrodes disposed on the source and drain regions of the semiconductor layer pattern, respectively.
1. A thin film transistor (TFT) comprising:
a substrate;
a gate electrode disposed on the substrate;
a gate insulating layer disposed on the gate electrode;
a polycrystalline silicon layer comprising a semiconductor layer pattern disposed on the gate insulating layer and including a channel region, a source region and a drain region;
an etch stop layer pattern disposed on the channel region of the semiconductor layer pattern and having a thickness of 20 to 60 nm, wherein a size of a grain forming the channel region of the semiconductor layer pattern is 1 to 10 μm, and a size of a grain forming the source and drain regions is 0.5 to 2 μm;
an amorphous silicon layer pattern doped with n or p-type impurities disposed on the source and drain regions of the semiconductor layer pattern; and
source and drain electrodes disposed on the amorphous silicon layer pattern on the source and drain regions of the semiconductor layer pattern, respectively.
2. The thin film transistor (TFT) according to claim 1 , wherein the etch stop layer pattern has a thickness of 40 to 60 nm.
3. The thin film transistor (TFT) according to claim 1 , wherein a grain boundary is not present in the channel region.
4. The thin film transistor (TFT) according to claim 1 , wherein a grain in the channel region of the semiconductor layer grows in a direction parallel with a line connecting the source region and the drain region.
5. The thin film transistor (TFT) according to claim 1 , wherein the etch stop layer pattern is formed of a silicon nitride layer or a silicon oxide layer.
6. The thin film transistor (TFT) according to claim 1 , wherein the etch stop layer pattern has an etch selectivity of 0 to 1 nm/minute with respect to a solution in which NH 4 F and HF are mixed at a ratio of 6:1.
7. The thin film transistor (TFT) according to claim 1 , further comprising:
the amorphous silicon layer pattern and the source and drain electrodes partially overlapping the etch stop.
8. An organic light emitting diode (OLED) display device comprising:
a substrate;
a gate electrode disposed on the substrate;
a gate insulating layer disposed on the gate electrode;
a polycrystalline silicon layer comprising a semiconductor layer pattern disposed on the gate insulating layer and including a channel region, a source region and a drain region;
an etch stop layer pattern disposed on the channel region of the semiconductor layer pattern and having a thickness of 20 to 60 nm, wherein a size of a grain forming the channel region of the semiconductor layer pattern is 1 to 10 μm, and a size of a grain forming the source and drain regions is 0.5 to 2 μm;
an amorphous silicon layer doped with n or p-type impurities disposed on the source and drain regions of the polycrystalline silicon layer;
source and drain electrodes disposed on the amorphous silicon layer and electrically contacting the source and drain regions of the semiconductor layer pattern;
a first electrode electrically connected to one of the source and drain electrodes;
an organic layer disposed on the first electrode and including an emission layer; and
a second electrode disposed on the organic layer.
9. A method of fabricating a thin film transistor, comprising:
preparing a substrate;
forming a gate electrode on the substrate;
forming a gate insulating layer on the gate electrode;
forming an amorphous silicon layer on the gate insulating layer;
forming an etch stop layer pattern to a thickness of 20 to 60 nm on a predetermined region of the amorphous silicon layer;
irradiating a laser on the entire surface of the substrate to crystallize the amorphous silicon layer to form a polycrystalline silicon layer including a channel region, a source region and a drain region, a size of a grain forming the channel region of the semiconductor layer pattern being 1 to 10 μm, and a size of a grain forming the source and drain regions being 0.5 to 2 μm;
forming an amorphous silicon layer doped with n or p-type impurities on the entire surface of the substrate where the etch stop layer pattern is formed after forming the polycrystalline silicon layer, and patterning the polycrystalline silicon layer and the amorphous silicon layer doped with n or p-type impurities;
forming a metal layer for source and drain electrodes on the entire surface of the substrate where the etch stop layer pattern is formed; and
patterning the metal layer to form source and drain electrodes electrically connected to the source and drain regions.
10. The method according to claim 9 , wherein the laser is a continuous-wave solid-state laser.
11. The method according to claim 10 , wherein the continuous-wave solid-state laser uses Nd:YVO 4 (Yttrium Vanadate) as a solid source, and is a continuous-wave solid-state green laser having a wavelength of 500 to 550 nm.
12. The method according to claim 10 , wherein the continuous-wave solid-state laser is irradiated in a direction parallel to a line connecting the source region and the drain region of the semiconductor layer.
13. The method according to claim 9 , wherein the patterning of the polycrystalline silicon layer and the metal layer to form source and drain electrodes comprises patterning using one mask.
14. The method according to claim 9 , wherein when the laser is irradiated on the entire surface of the substrate to crystallize the amorphous silicon layer, a temperature of the amorphous silicon layer corresponding to a region where the etch stop layer pattern is formed is higher than a temperature of the amorphous silicon layer corresponding to a region where the etch stop layer pattern is not formed.
15. The method according to claim 9 , wherein the etch stop layer pattern irradiated with the laser has an etch selectivity of 0 to 1 nm/minute with respect to an etching solution in which NH 4 F and HF are mixed at a ratio of 6:1.
16. The method according to claim 9 , wherein the patterning of the polycrystalline silicon layer and the amorphous silicon layer doped with n or p-type impurities comprises patterning using one mask.
17. A thin film transistor (TFT) manufactured by the method of claim 9 , comprised of:
the substrate;
the gate electrode being disposed on the substrate;
the gate insulating layer being disposed on the gate electrode;
the polycrystalline silicon layer comprising a semiconductor layer pattern disposed on the gate insulating layer and including the channel region, the source region and the drain region;
the etch stop layer pattern being disposed on the channel region of the semiconductor layer pattern;
the amorphous silicon layer doped with n or p-type impurities disposed on the source and drain regions of the polycrystalline silicon layer; and
the source and drain electrodes being respectively disposed on the source and drain regions of the semiconductor layer pattern.