Semiconductor device
View Patent ↗A multilayer wiring layer 400 , a first inductor 310 and a second inductor 320 are formed on a substrate 10 . The multilayer wiring layer is formed by alternately stacking an insulating layer and a wiring layer in this order t or more times (t≧3). The first inductor 310 is provided in the nth wiring layer in the multilayer wiring layer 400 . The second inductor 320 is provided in the mth wiring layer in the multilayer wiring layer 400 (t≧m≧n+2) and positioned above the first inductor 310 . No inductor is provided in any of the wiring layers positioned between the nth wiring layer and the mth wiring layer to be positioned above the first inductor 310 . The first inductor 310 and the second inductor 320 constitute a signal transmitting device 300 which transmits an electrical signal in either of two directions.
1. A semiconductor device comprising:
a substrate;
a multilayer wiring layer formed on said substrate and having an insulating layer and a wiring layer alternately stacked in this order t or more times (t≧3) in this order;
a first inductor provided in the nth wiring layer in said multilayer wiring layer; and
a second inductor provided in the mth wiring layer in said multilayer wiring layer (t≧m≧n+2) and positioned above said first inductor,
wherein no inductor is provided in any of the wiring layers positioned between the nth wiring layer and the mth wiring layer to be positioned above the first inductor.
2. The semiconductor device according to claim 1 , further comprising a first circuit connected to one of said first inductor and said second inductor.
3. The semiconductor device according to claim 2 , wherein said first circuit is connected to said first inductor.
4. The semiconductor device according to claim 2 , further comprising a second circuit connected to the other of said first inductor and said second inductor, a voltage different from a voltage input to said first circuit being input to said second circuit.
5. The semiconductor device according to claim 4 , wherein said substrate is a SOI (silicon on insulator) substrate;
said first circuit has a first transistor formed in a first region of said substrate;
said second circuit has a second transistor formed in a second region of said substrate; and
a semiconductor layer of said SOI substrate has an embedded insulating layer which insulates said first region and said second region from each other.
6. The semiconductor device according to claim 5 , wherein said first transistor and said second transistor have reference potentials different from each other.
7. The semiconductor device according to claim 5 , wherein said first inductor and said second inductor are formed above a third region between said first region and said second region in said SOI substrate;
said first inductor is connected to said first circuit; and
said embedded insulating layer insulates the second region from said first region and said third region.
8. The semiconductor device according to claim 1 , wherein said nth wiring layer is the lowermost layer in said wiring layer and the mth wiring layer is the uppermost layer in said wiring layer.