Semiconductor device with non-volatile memory and random access memory
View Patent ↗A semiconductor device including a large capacity non-volatile memory and at least one random access memory, said the access time of said device being matched to the access time of each random access memory. The semiconductor memory device is comprised of: a non-volatile memory FLASH having a first reading time; a random access memory DRAM having a second reading time which is more than 100 times shorter than the first reading time; a circuit that includes a control circuit connected to both the FLASH and the DRAM and enabled to control accesses to those FLASH and DRAM; and a plurality of I/O terminals connected to the circuit. As a result, FLASH data is transferred to the DRAM before the DRAM is accessed, thereby matching the access time between the FLASH and the DRAM. Data is written back from the DRAM to the FLASH as needed, thereby keeping data matched between the FLASH and the DRAM and storing the data.
1. A memory module, comprising:
a non-volatile memory;
a random access memory;
a command register into which a load instruction is written from an outside of the memory module;
a controller configured to control the non-volatile memory and the random access memory to transfer data from the non-volatile memory to the random access memory when the load instruction is written into the command register.
2. A memory module according to claim 1 , further comprising:
a terminal configured to output a signal during transfer of the data from non-volatile memory to random access memory.
3. A memory module comprising:
a non-volatile memory;
a random access memory;
a controller including a command register, the controller configured to control the non-volatile memory and the random access memory to transfer data from the non-volatile memory to the random access memory when the load instruction is written into the command register from an outside of the memory module.
4. A memory module according to claim 3 , further comprising:
a terminal configured to output a signal during transfer of the data from the non-volatile memory to the random access memory.
5. A memory module according to claim 3 , wherein the random access memory is a dynamic random access memory.
6. A memory module according to claim 3 , wherein the dynamic random access memory is a SDRAM.
7. A memory module according to claim 3 ,
wherein the dynamic random access memory is a DDR-SDRAM, and
wherein the controller further includes:
a clock input terminal configured to receive a first clock signal, and
a clock output terminal configured to provide a second clock signal based on the first clock signal to the DDR-SDRAM.
8. A memory module according to claim 3 , wherein the non-volatile memory is a flash memory.
9. A memory module according to claim 8 , wherein the flash memory is a NAND type flash memory.
10. A memory module comprising:
a flash memory;
a DRAM synchronized with a clock; and
a controller including a command register and a static random access memory, the controller being configured to control the flash memory and the DRAM to transfer data from the flash memory to the DRAM when an instruction is written into the command register from an outside of the memory module.
11. A memory module according to claim 10 , further comprising:
a terminal configured to output a signal during transfer of the data from the flash memory to the DRAM.
12. A memory module according to claim 10 ,
wherein the flash memory is a NAND type flash memory,
wherein the DRAM is a DDR-SDRAM, and
wherein the controller further includes:
a clock input terminal configured to receive a first clock signal, and
a clock output terminal configured to provide a second clock signal based on the first clock signal to the DDR-SDRAM.
13. A memory module according to claim 10 , wherein the instruction is a load instruction.
14. A memory module comprising:
a NAND type flash memory;
a DDR-SDRAM; and
a controller coupled to the NAND type flash memory and to the DDR-SDRAM, and including:
a command register,
a clock input terminal configured to receive a first clock signal,
a clock output terminal configured to provide a second clock signal based on the first clock signal to the DDR-SDRAM,
the controller configured to control the NAND type flash memory and the DDR-SDRAM to transfer data from the NAND type flash memory to the DDR-SDRAM when an instruction is supplied to the command register from an outside of the memory module.
15. A memory module according to claim 14 , wherein the instruction is a load instruction.
16. A memory module according to claim 14 , further comprising:
a terminal configured to output a signal during transferring the data from the NAND type flash memory to the DDR-SDRAM.
17. A memory module comprising:
a NAND type flash memory;
a SDRAM; and
a controller coupled to the NAND type flash memory and to the SDRAM and including:
a command register, and
an error correction circuit configured to detect whether or not data read out from the NAND type flash memory includes an error therein and correct the error thereof when checking,
the controller configured to control the NAND type flash memory and the SDRAM to transfer the data from the NAND type flash memory to the SDRAM when an instruction is supplied to the command register from an outside of the memory module.
18. A memory module according to claim 17 , further comprising:
a terminal configured to output a signal during transferring the data from the NAND type flash memory to the SDRAM.
19. A memory module according to claim 17 , wherein the instruction is a load instruction.
20. A memory module according to claim 17 , wherein the controller further includes:
a clock input terminal configured to receive a first clock signal, and
a clock output terminal configured to provide a second clock signal based on the first clock signal to the SDRAM.
21. A memory module comprising:
a NAND type flash memory;
a DRAM synchronized with a clock;
a controller coupled to the NAND type flash memory and to the DRAM and including a command register, the controller being configured to control the NAND type flash memory and the DRAM to transfer data from the NAND type flash memory to the DRAM when a first instruction code is written into the command register from an outside of the memory module and control the NAND type flash memory and the DRAM to transfer data from the DRAM to the NAND type flash memory to transfer data from the DRAM to the NAND type memory when a second instruction code is written into the command register from the outside of the memory module.
22. A memory module according to claim 21 , further comprising:
a terminal configured to output a signal during transfer of the data from the NAND type flash memory to the DRAM or during transfer of the data from the DRAM to the NAND type flash memory.
23. A memory module according to claim 21 ,
wherein the first instruction code is a load instruction code, and
wherein the second instruction code is a store command.
24. A memory module according to claim 21 ,
wherein the controller further includes an error correction circuit to detect whether or not the data read from the NAND type flash memory contains an error and to correct the error when detected.
25. A memory module according to claim 21 , wherein the controller further includes:
a clock input terminal configured to receive a first clock signal, and
a clock output terminal configured to provide a second clock signal based on the first clock signal to the DRAM.
26. A memory module according to claim 25 , wherein the DRAM is a DDR-SDRAM.
27. A memory module according to claim 25 , wherein the controller further includes a SRAM.