IP Library Granted Patent US 8,404,154
Granted Patent B2
US 8,404,154 · App. 12/454,701 · Granted Mar 26, 2013

Blue emitting semiconductor nanocrystals and compositions and devices including same

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Quick Facts
Patent No.
US 8,404,154
App. No.
12/454,701
Granted
Mar 26, 2013
Kind
B2
Abstract

A semiconductor nanocrystal capable of emitting blue light upon excitation. Also disclosed are devices, populations of semiconductor nanocrystals, and compositions including a semiconductor nanocrystal capable of emitting blue light upon excitation. In one embodiment, a semiconductor nanocrystal capable of emitting blue light including a maximum peak emission at a wavelength not greater than about 470 nm with a photoluminescence quantum efficiency greater than about 65% upon excitation. In another embodiment, a semiconductor nanocrystal includes a core comprising a first semiconductor material comprising at least three chemical elements and a shell disposed over at least a portion of the core, the shell comprising a second semiconductor material, wherein the semiconductor nanocrystal is capable of emitting blue light with a photoluminescence quantum efficiency greater than about 65% upon excitation. In a further embodiment, a semiconductor nanocrystal includes a core comprising a first semiconductor material comprising at least three chemical elements and a shell disposed over at least a portion of the core, the shell comprising a second semiconductor material comprising at least three chemical elements, wherein the semiconductor nanocrystal is capable of emitting light including a maximum peak emission in the blue region of the spectrum upon excitation.

Claims (31)

1. A semiconductor nanocrystal capable of emitting blue light including a maximum peak emission at a wavelength not greater than about 470 nm with a photoluminescence quantum efficiency greater than about 65% upon excitation, wherein the semiconductor nanocrystal comprises a core comprising a first semiconductor material and a shell disposed over at least a portion of a surface of the core, the shell comprising a second semiconductor material.

2. A semiconductor nanocrystal in accordance with claim 1 wherein the photoluminescence quantum efficiency is greater than about 70% upon excitation.

3. A semiconductor nanocrystal in accordance with claim 1 wherein the photoluminescence quantum efficiency is greater than about 80% upon excitation.

4. A semiconductor nanocrystal in accordance with claim 1 wherein the photoluminescence quantum efficiency is greater than about 90% upon excitation.

5. A semiconductor nanocrystal in accordance with claim 1 wherein the photoluminescence quantum efficiency is greater than about 95% upon excitation.

6. A semiconductor nanocrystal in accordance with claim 1 wherein the photoluminescence quantum efficiency is about 100% upon excitation.

7. A semiconductor nanocrystal in accordance with claim 1 wherein the first semiconductor material comprises one or more chemical elements.

8. A semiconductor nanocrystal in accordance with claim 1 wherein the first semiconductor material comprises an alloy.

9. A semiconductor nanocrystal in accordance with claim 1 wherein the first semiconductor material comprises a homogeneous alloy.

10. A semiconductor nanocrystal in accordance with claim 1 wherein the second semiconductor material comprises an alloy.

11. A semiconductor nanocrystal in accordance with claim 1 wherein the second semiconductor material comprises a homogeneous alloy.

12. A semiconductor nanocrystal in accordance with claim 1 wherein the first semiconductor material comprises zinc, cadmium, and selenium.

13. A semiconductor nanocrystal in accordance with claim 1 wherein the second semiconductor material comprises zinc, cadmium, and sulfur.

14. A semiconductor nanocrystal in accordance with claim 1 wherein the first semiconductor material comprises Zn 1-x Cd x Se, wherein 0<x<1.

15. A semiconductor nanocrystal in accordance with claim 13 , wherein the second semiconductor material can comprise Cd x Zn 1-x S wherein 0<x<1.

16. A semiconductor nanocrystal in accordance with claim 1 wherein the maximum peak emission has a full width at half maximum of not more than 40 nm.

17. A semiconductor nanocrystal in accordance with claim 1 wherein the maximum peak emission has a full width at half maximum of not more than 30 nm.

18. A semiconductor nanocrystal in accordance with claim 1 wherein one or more ligands are attached thereto.

19. A semiconductor nanocrystal in accordance with claim 1 wherein the second semiconductor material comprises one or more chemical elements.

20. A semiconductor nanocrystal in accordance with claim 1 wherein the first semiconductor material comprises zinc, cadmium, and sulfur.

21. A semiconductor nanocrystal in accordance with claim 1 wherein the first semiconductor material comprises Zn x Cd 1-x S, wherein 0<x<1.

22. A semiconductor nanocrystal in accordance with claim 21 wherein 0<x≦0.5.

23. A semiconductor nanocrystal in accordance with claim 21 wherein 0<x≦0.3.

24. A semiconductor nanocrystal in accordance with claim 21 wherein 0.05<x<0.2.

25. A semiconductor nanocrystal in accordance with claim 21 wherein 0.1≦x≦0.15.

26. A semiconductor nanocrystal in accordance with claim 21 wherein x is from about 0.10 to about 0.12.

27. A semiconductor nanocrystal in accordance with claim 1 wherein the second semiconductor material comprises ZnS.

28. A semiconductor nanocrystal in accordance with claim 1 wherein the color of the light emitted by the semiconductor nanocrystal is longer than the color of the light emitted by the core without the shell.

29. A semiconductor nanocrystal in accordance with claim 1 wherein the shell has a thickness in a range from greater than about 0 to about 20 monolayers.

30. A semiconductor nanocrystal in accordance with claim 1 wherein the first semiconductor material comprises at least three chemical elements.

31. A semiconductor nanocrystal in accordance with claim 1 wherein the second semiconductor material comprises at least three chemical elements.

Assignments (3)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Dec 29, 2016
From: QD VISION, INC.
To: SAMSUNG ELECTRONICS CO., LTD.
Reel/Frame 041221/0001 →
RELEASE OF SECURITY INTEREST Recorded Nov 30, 2016
From: CAPRICORN-LIBRA INVESTMENT GROUP, LP
To: QD VISION, INC.
Reel/Frame 040766/0928 →
SECURITY INTEREST Recorded Aug 5, 2016
From: QD VISION, INC.
To: CAPRICORN-LIBRA INVESTMENT GROUP, LP
Reel/Frame 039595/0098 →