Bifacial solar cells with overlaid back grid surface
View Patent ↗A simplified manufacturing process and the resultant bifacial solar cell (BSC) are provided, the simplified manufacturing process reducing manufacturing costs. The BSC includes an active region located on the front surface of the substrate, formed for example by a phosphorous diffusion step. After removing the PSG, assuming phosphorous diffusion, and isolating the front junction, dielectric layers are deposited on the front and back surfaces. Contact grids are formed, for example by screen printing. Prior to depositing the back surface dielectric, a metal grid may be applied to the back surface, the back surface contact grid registered to, and alloyed to, the metal grid during contact firing.
1. A method of fabricating a bifacial solar cell, the method comprising the steps of:
diffusing phosphorous onto a front surface of a silicon substrate to form a front surface junction and onto a back surface of said silicon to form a back surface junction;
removing a phosphor-silicate glass (PSG) formed during said phosphorous diffusing step;
removing said back surface junction and isolating said front surface junction;
depositing a front surface passivation and anti-reflection (AR) dielectric layer onto said front surface junction and a back surface passivation and AR dielectric layer onto said back surface of said silicon substrate;
applying a back surface metal grid onto said back surface of said silicon substrate, wherein said back surface metal grid applying step is performed after said back surface junction removing step and before said back surface passivation and AR dielectric layer depositing step;
applying a back surface contact grid, and aligning said back surface contact grid with said back surface metal grid;
applying a front surface contact grid;
firing said back surface contact grid; and
firing said front surface contact grid.
2. The method of claim 1 , wherein said step of applying said back surface contact grid further comprises the step of screen printing said back surface contact grid, and wherein said step of applying said front surface contact grid further comprises the step of screen printing said front surface contact grid.
3. The method of claim 1 , wherein said step of firing said back surface contact grid further comprises the step of firing said back surface grid through said back surface passivation and AR dielectric layer and through said back surface junction to form a floating back surface junction.
4. The method of claim 1 , wherein said back surface junction removing step further comprises the step of etching said back surface.
5. The method of claim 1 , wherein said back surface metal grid applying step further comprises the step of depositing said back surface metal grid through a shadow mask onto said back surface of said silicon substrate.
6. The method of claim 1 , wherein said back surface metal grid applying step further comprises the step of screen printing said back surface metal grid onto said back surface of said silicon substrate.
7. The method of claim 1 , wherein said step of firing said back surface contact grid is performed prior to said step of applying said front surface contact grid.
8. The method of claim 1 , wherein said steps of firing said back and front surface contact grids are performed simultaneously.
9. The method of claim 1 , wherein said step of firing said back surface contact grid is performed prior to said step of applying said front surface contact grid.
10. The method of claim 1 , wherein said PSG removing step further comprises the step of etching said front surface with a hydrofluoric acid etch.
11. A method of fabricating a bifacial solar cell, the method comprising the steps of:
depositing a dielectric layer onto a back surface of a silicon substrate;
diffusing phosphorous onto a front surface of said silicon substrate to form an n + layer and a front surface junction;
removing a phosphor-silicate glass (PSG) formed during said phosphorous diffusing step;
depositing a front surface passivation and anti-reflection (AR) dielectric layer onto said n + layer;
applying a back surface metal grid onto said back surface of said silicon substrate;
applying a back surface contact grid, and aligning said back surface contact grid with said back surface metal grid;
applying a front surface contact grid;
firing said back surface contact grid;
firing said front surface contact grid; and
isolating said front surface junction.
12. The method of claim 11 , wherein said step of applying said back surface contact grid further comprises the step of screen printing said back surface contact grid, and wherein said step of applying said front surface contact grid further comprises the step of screen printing said front surface contact grid.
13. The method of claim 11 , wherein said step of isolating said front surface junction is performed using a laser scriber.
14. The method of claim 11 , wherein said steps of firing said back and front surface contact grids are performed simultaneously.
15. The method of claim 11 , wherein said step of firing said back surface contact grid is performed prior to said step of applying said front surface contact grid.
16. The method of claim 11 , wherein said PSG removing step further comprises the step of etching said front surface with a hydrofluoric etch.