TFT substrate, LCD device using same and method for manufacturing TFT substrate
View Patent ↗A thin film transistor (TFT) substrate includes a transparent substrate, a plurality of TFTs and a photosensitive capacitor formed on the transparent substrate. A capacitance of the photosensitive capacitor is variable on the condition of environment brightness. A method for manufacturing the TFT substrate and an LCD using the TFT substrate are also provided.
1. A liquid crystal display (LCD) device, comprising:
a color filter substrate;
a thin film transistor (TFT) substrate opposite to the color filter substrate; and
a liquid crystal layer sandwiched between the color filter substrate and the TFT substrate;
wherein the TFT substrate comprises a plurality of TFTs and at least one photosensitive capacitor, the at least one photosensitive capacitor comprises a first electrode, a second electrode opposite to the first electrode, and an insulator media sandwiched between the first electrode and the second electrode, the second electrode is made of semiconductor material, and a capacitance of the at least one photosensitive capacitor is variable on condition that external light beams are applied to the second electrode;
wherein each TFT comprises a gate electrode, an insulating layer covering the gate electrode, and a semiconductor layer configured as a channel region of the TFT located on the insulating layer, the gate electrode of the TFT and the first electrode of the at least photosensitive capacitor are formed at a same layer, the insulation layer of the TFT further covers the first electrode of the at least one photosensitive capacitor, and the semiconductor layer of the TFT and the second electrode of at least one photosensitive capacitor are formed at a same layer.
2. The LCD device of claim 1 , wherein the second electrode comprises a lightly-doped amorphous-silicon (a-Si) layer and a heavily-doped a-Si layer.
3. The LCD device of claim 1 , wherein the first electrode is made of material selected from the group consisting of aluminum (Al), molybdenum (Mo), chromium (Cr), tantalum (Ta), copper (Cu), and any combination of any of these metals.
4. The LCD device of claim 1 , wherein the TFT substrate further comprises a connecting electrode connected to the second electrode of the photosensitive capacitor.
5. The LCD device of claim 4 , further comprising a power source and a resistor, the power source electrically connected to the second electrode of the at least one photosensitive capacitor via the connecting electrode.
6. The LCD device of claim 1 , wherein the TFT substrate further comprises a plurality of pixel electrodes corresponding to the plurality of TFTs.
7. The LCD device of claim 1 , wherein an area of the second electrode is less than an area of the electrode.
8. The LCD device of claim 1 , wherein the second electrode of the at least one photosensitive capacitor is made of a same material as that of the semiconductor layer of the TFT.
9. The LCD device of claim 8 , wherein the first electrode of the at least on photosensitive capacitor is made of a same material as that of the gate electrode of the TFT.