Method of enhancing the conductive and optical properties of deposited indium tin oxide (ITO) thin films
View Patent ↗Certain example embodiments of this invention relate to a method of activating an indium tin oxide (ITO) thin film deposited, directly or indirectly, on a substrate. The ITO thin film is baked in a low oxygen environment at a temperature of at least 450 degrees C. for at least 10 minutes so as to provide for (1) a post-baked resistivity of the ITO thin film that is below a resistivity of a corresponding air-baked ITO thin film, (2) a post-baked visible spectrum absorption and transmission of the ITO thin film that respectively are below and above the absorption and transmission of the corresponding air-baked ITO thin film, and (3) a post-baked infrared reflectivity of the ITO thin film that is above the reflectivity of the corresponding air-baked ITO thin film. The substrate with the activated ITO thin film may be used in a photovoltaic device, for example.
1. A method of activating an indium tin oxide (ITO) thin film deposited, directly or indirectly, on a substrate, the method comprising:
baking the ITO thin film in a low oxygen environment containing oxygen at a temperature of at least 450 degrees C. for at least about 30 minutes so as to provide for (1) a post-baked resistivity of the ITO thin film that is below a resistivity of a corresponding air-baked ITO thin film, (2) a post-baked visible spectrum absorption and transmission of the ITO thin film that respectively are below and above the absorption and transmission of the corresponding air-baked ITO thin film, and (3) a post-baked infrared reflectivity of the ITO thin film that is above the reflectivity of the corresponding air-baked ITO thin film, and wherein the post-baked resistivity of the ITO film from about 1.75×10 −4 to 2×10 −4 ohm-cm.
2. The method of claim 1 , wherein the low oxygen environment is a vacuum.
3. The method of claim 1 , wherein the ITO thin film is baked at a temperature of at least 475 degrees C.
4. The method of claim 1 , wherein the ITO thin film is baked at a temperature of at least 500 degrees C.
5. The method of claim 1 , wherein the ITO thin film is baked for less than 45 minutes.
6. The method of claim 1 , wherein the ITO thin film is baked for no more than 30 minutes.
7. The method of claim 1 , wherein the post-baked ITO thin film exhibits increased infrared reflectivity for wavelengths at and beyond wavelengths of 1400 nm.
8. The method of claim 1 , wherein the post-baked resistivity of the ITO thin film is at least 25% below the resistivity of the corresponding air-baked ITO thin film.
9. The method of claim 1 , wherein the post-baked infrared reflectivity of the ITO thin film is at least 20% points above the reflectivity of the corresponding air-baked ITO thin film for infrared wavelengths at or beyond 1400 nm.
10. A method of making a photovoltaic device, the method comprising:
providing a substantially transparent substrate;
disposing a layer comprising indium tin oxide (ITO), directly or indirectly, on the substrate; and
heating the layer comprising ITO in a low oxygen environment containing oxygen to a temperature of at least 475 degrees C. for at least 10 minutes so as to provide for (1) a post-baked sheet resistance of the layer comprising ITO that is below a sheet resistance of a corresponding air-baked ITO thin film, (2) a post-baked visible spectrum absorption and transmission of the layer comprising ITO that respectively are below and above the absorption and transmission of the corresponding air-baked ITO thin film, and (3) a post-baked infrared reflectivity of the layer comprising ITO that is above the reflectivity of the corresponding air-baked ITO thin film, such that the infrared reflectivity of the layer comprising ITO in the photovoltaic device is at least 20% points above the reflectivity of a corresponding air-baked ITO thin film in a corresponding photovoltaic device for infrared wavelengths at or beyond 1400 nm.
11. The method of claim 10 , wherein the low oxygen environment is a vacuum.
12. The method of claim 10 , wherein the layer comprising ITO is heated to a temperature of at least 500 degrees C.
13. The method of claim 10 , wherein the layer comprising ITO is heated for no more than 60 minutes.
14. The method of claim 10 , wherein the sheet resistance of the layer comprising ITO in the photovoltaic device is at least 25% below a sheet resistance of a corresponding air-baked ITO thin film in a corresponding photovoltaic device.
15. The method of claim 10 , wherein the photovoltaic device is a front electrode photovoltaic device.
16. The method of claim 10 , wherein the photovoltaic device is a back electrode photovoltaic device.
17. The method of claim 10 , wherein the photovoltaic device is a CdTe photovoltaic device.
18. The method of claim 17 , further comprising activating the layer comprising ITO as the CdTe is being formed.
19. A method of making an electronic device, the method comprising:
providing a substrate having a layer comprising indium tin oxide (ITO) formed, directly or indirectly, thereon;
heating the layer comprising ITO in a low oxygen environment containing oxygen to a temperature of at least 475 degrees C. for from about 30 to 60 minutes to activate the layer comprising ITO, such that the layer comprising ITO has a sheet resistance lower than a sheet resistance of a corresponding layer comprising ITO activated in air-inclusive environment at a temperature no greater than 350 degrees C., such that a resistivity of the layer is from about 1.75×10 −4 to 2×10 −4 ohm-cm, and wherein the infrared reflectivity of the layer comprising ITO in the electronic device is at least 20% points above the reflectivity of a corresponding air-baked ITO thin film in a corresponding photovoltaic device for infrared wavelengths at or beyond 1400 nm; and
building the substrate into the electronic device.