Method for manufacturing semiconductor chip and semiconductor device
View Patent ↗An improved yield of chips is realized by reducing the width of dicing streets on the front surface side of a semiconductor wafer. A method for semiconductor chip, divided a semiconductor wafer 10 having a plurality of circuit patterns formed on one surface 18 into pieces, comprising, forming a groove in a boundary region between the circuit patterns from the other surface 19 of the semiconductor wafer 10 by using a blade, forming a modified layer 14 in the boundary region between the circuit patterns by irradiation with laser light L from the one surface 18 or the other surface 19 of the semiconductor wafer 10 , and dividing the semiconductor wafer into pieces by breaking the modified layer 14 . The modified layer 14 is formed between a bottom surface 17 of a groove portion 16 and the one surface 18 of the semiconductor wafer 10 , and a forming width WM of the modified layer 14 is smaller than the width of the groove portion 16.
1. A method for manufacturing a semiconductor chip by dividing a semiconductor wafer having a plurality of circuit patterns formed on one surface into pieces, said method comprising:
forming a groove in a boundary region between the circuit patterns from an other surface of the semiconductor wafer by using a blade;
forming a modified layer in the boundary region between the circuit patterns by laser irradiation from the one or the other surface of the semiconductor wafer; and
dividing the semiconductor wafer into pieces by breaking the modified layer,
wherein the modified layer is formed between a bottom surface of the groove and the one surface of the semiconductor wafer, and a width of the modified layer is smaller than a width of the groove,
wherein the circuit patterns include an area that comprises a film with a dielectric constant that is lower than a dielectric constant of SiO 2 , and
wherein, in a plan view, the area of the circuit patterns overlaps with the bottom surface of the groove.
2. The method for manufacturing a semiconductor chip according to claim 1 , wherein the circuit patterns are formed between the bottom surface of the groove and the one surface of the semiconductor wafer.
3. The method for manufacturing a semiconductor chip according to claim 1 , wherein said forming the groove from the other surface of the semiconductor wafer is carried out to, at least, an interface between the substrate and a multi-layer interconnect structure.
4. The method for manufacturing a semiconductor chip according to claim 3 , wherein a thickness of an uncut region of the semiconductor wafer is 20 to 200 μm.
5. The method for manufacturing a semiconductor chip according to claim 1 , wherein said dividing the semiconductor wafer into pieces is performed on the semiconductor wafer having the groove and the modified layer formed in advance.
6. The method for manufacturing a semiconductor chip according to claim 1 , wherein the boundary region between the circuit patterns is molten by laser irradiation to perform said dividing the semiconductor wafer into pieces together with forming the modified layer.
7. The method for manufacturing a semiconductor chip according to claim 1 , wherein the laser irradiation is performed from the other surface of the semiconductor wafer.
8. The method for manufacturing a semiconductor chip according to claim 1 , wherein the laser irradiation is performed from the one surface of the semiconductor wafer.
9. The method for manufacturing a semiconductor chip according to claim 1 , wherein an edge of the blade has a recessed shape in section.
10. The method for manufacturing a semiconductor chip according to claim 1 , wherein the area of the circuit patterns is formed between the bottom surface of the groove and the one surface of the semiconductor wafer.
11. The method for manufacturing a semiconductor chip according to claim 1 , wherein the bottom surface of the groove abuts the semiconductor wafer.
12. The method for manufacturing a semiconductor chip according to claim 1 , wherein the semiconductor wafer extends between the modified layer and the bottom surface of the groove.
13. The method for manufacturing a semiconductor chip according to claim 1 , wherein an upper surface of the modified layer is located in a predetermined distance from the bottom surface of the groove.