Semiconductor device and method for manufacturing the same
View Patent ↗A semiconductor device and a method for manufacturing the same prevents copper from being exposed to a surface of a passivation film after a copper metal line formation, to avoid contamination of processing equipment and the process environment. The method includes providing a substrate with a scribe lane and a chip area in which metal wiring layers are formed, forming a dielectric film, forming a conductive film on the dielectric film in a chip area and an alignment mark on the dielectric film in a scribe lane, forming passivation films, exposing the conductive film by removing the passivation films in a bonding pad portion in a chip area, forming another conductive film in the bonding pad portion to electrically connect with the conductive film, forming another passivation film, and selectively removing the passivation films.
1. A semiconductor device, comprising:
a semiconductor substrate having a scribe lane and a chip area in which a plurality of metal lines are formed;
a dielectric film formed on the semiconductor substrate;
a first conductive film formed on the dielectric film in the chip area;
an alignment mark formed on the dielectric film in the scribe lane;
a first passivation film formed on an entire surface of the semiconductor substrate including the first conductive film in the chip area and the alignment mark in the scribe lane sequentially;
a second passivation film formed on the semiconductor substrate in the chip area excluding the scribe lane and the first conductive film;
a second conductive film formed on the second passivation film and electrically connected with the first conductive film through the first passivation film and the second passivation film in the chip area; and
a third passivation film formed on the semiconductor substrate in the chip area excluding the scribe lane and the second conductive film,
wherein the first passivation film and the second passivation film have different etch selectivity.
2. The semiconductor device of claim 1 , wherein the first conductive film and the alignment mark are formed of copper.
3. The semiconductor device of claim 1 , wherein the first passivation film is a silicon nitride film and the second passivation film is a tetra-ethyl-ortho-silicate oxide film.
4. The semiconductor device of claim 1 , wherein the second conductive film is formed of aluminum.