Debonding and transfer techniques for hetero-epitaxially grown graphene, and products including the same
View Patent ↗Certain example embodiments of this invention relate to the use of graphene as a transparent conductive coating (TCC). In certain example embodiments, graphene thin films grown on large areas hetero-epitaxially, e.g., on a catalyst thin film, from a hydrocarbon gas (such as, for example, C 2 H 2 , CH 4 , or the like). The graphene thin films of certain example embodiments may be doped or undoped. In certain example embodiments, graphene thin films, once formed, may be lifted off of their carrier substrates and transferred to receiving substrates, e.g., for inclusion in an intermediate or final product. Graphene grown, lifted, and transferred in this way may exhibit low sheet resistances (e.g., less than 150 ohms/square and lower when doped) and high transmission values (e.g., at least in the visible and infrared spectra).
1. A method of disposing a graphene thin film on a target receiving substrate, the method comprising:
hetero-epitaxially growing the graphene thin film on a metal catalyst thin film;
disposing the graphene thin film and the catalyst thin film, directly or indirectly, on the target receiving substrate; and
electrochemically anodizing the catalyst thin film below the graphene so as to render the catalyst thin film a substantially transparent metal oxide.
2. The method of claim 1 , wherein during the electrochemical anodizing, the graphene thin film is caused to act as a cathode as the metal catalyst thin film is anodized.
3. The method of claim 1 , wherein the metal catalyst film comprises nickel.
4. The method of claim 1 , wherein the metal catalyst film comprises nickel and chromium.
5. The method of claim 4 , wherein the metal catalyst film comprises 3-15% chromium.
6. The method of claim 1 , wherein the metal catalyst film comprises vanadium.
7. The method of claim 1 , wherein the metal catalyst film is supported by a back support.
8. The method of claim 7 , wherein the back support comprises glass.
9. The method of claim 7 , wherein the back support comprises a silicon wafer.
10. The method of claim 7 , wherein the back support comprises zirconium.