Multijunction Solar Cells with Group IV/III-V Hybrid Alloys for Terrestrial Applications
A solar cell including a substrate; a first solar subcell composed of GeSiSn disposed over the substrate and having a first band gap; a second solar subcell composed of GaAs, InGaAsP, or InGaP and disposed over the first solar subcell having a second band gap greater than the first band gap and lattice matched to said first solar subcell; and a third solar subcell composed of GaInP and disposed over the second solar subcell having a third band gap greater than the second band gap and lattice matched with respect to the second subcell.
1 . A multijunction solar cell comprising:
a substrate;
a first solar subcell composed of GeSiSn disposed over the substrate and having a first band gap;
a second solar subcell composed of GaAs, InGaAsP, or InGaP and disposed over the first solar subcell having a second band gap greater than the first band gap and lattice matched to said first solar subcell; and
a third solar subcell composed of GaInP and disposed over the second solar subcell having a third band gap greater than the second band gap and lattice matched with respect to the second subcell.
2 . A solar cell as defined in claim 1 , wherein the substrate is composed of silicon or germanium.
3 . A solar cell as defined in claim 1 , further comprising a GeSiSn buffer layer deposited over said substrate.
4 . A solar cell as defined in claim 3 , further comprising a GeSiSn BSF layer deposited over said buffer layer.
5 . A solar cell as defined in claim 1 , further comprising a GeSiSn window layer deposited over said first solar subcell.
6 . A solar cell as defined in claim 1 , further comprising a tunnel diode comprised of GaAs and AlGaAs disposed over said first solar subcell.
7 . A solar cell as defined in claim 1 , wherein said first solar subcell has a band gap of approximately 0.9 eV.
8 . A solar cell as defined in claim 1 , wherein said second solar subcell has a band gap of approximately 1.35 eV.
9 . A solar cell as defined in claim 1 , wherein said third solar subcell has a band gap of approximately 1.75 eV.
10 . A multijunction solar cell comprising:
a bottom solar subcell composed of GeSiSn having a first band gap in the range of 0.7 to 1.2 eV;
one or more middle solar subcells disposed over the bottom solar subcell, each having a band gap greater than the first band gap and in the range of 1.0 to 2.4 eV, and lattice matched to said bottom solar subcell; and
a top solar subcell disposed over the middle solar subcells and having a third band gap greater than the band gap of the uppermost middle solar subcell and in the range of 1.6 to 2.4 eV, and lattice matched with respect to the middle subcells.
11 . A solar cell as defined in claim 10 , further comprising substrate composed of silicon or germanium, wherein the bottom subcell is disposed over and lattice matched to said substrate.
12 . A solar cell as defined in claim 11 , further comprising a GeSiSn buffer layer deposited over said substrate.
13 . A solar cell as defined in claim 12 , further comprising a GeSiSn BSF layer deposited over said buffer layer.