Method of manufacturing solid-state imaging device and method of manufacturing electronic apparatus

1. A method of manufacturing a solid-state imaging device, where a signal circuit is formed on an insulating interlayer on a first side of a semiconductor substrate in which a photoelectric conversion part is formed and light is incident on the photoelectric conversion part from a second side thereof, the method comprising the steps of:

forming an on-chip color filter and an on-chip microlens on the second side where light is incident; and

forming a primary opening in a pad part on the second side where light is incident, after forming the on-chip color filter and the on-chip microlens

forming a secondary opening by selectively dry etching and removing the semiconductor substrate from the surface of the semiconductor substrate to reach an upper surface of the insulating interlayer at a portion corresponding to the opening through a resist mask formed on the on-chip microlens.

2. The method of manufacturing a solid-state imaging device according to claim 1 , wherein the on-chip color filter and the on-chip microlens are formed by application of organic films, respectively.

3. The method of manufacturing a solid-state imaging device according to claim 2 , wherein the step of forming the on-chip microlens further includes the steps of:

forming an on-chip microlens member, which is made of an organic film with an opening in a portion where the pad part is formed, on the surface where the on-chip color filter is formed;

forming a lens-shaped member on a part of the on-chip microlens member;

etching back a whole-surface to transfer a primary on-chip microlens to the on-chip microlens member and simultaneously etching from a top surface to a depth into the semiconductor substrate through the opening of the on-chip microlens member to form the opening.

4. The method of manufacturing a solid-state imaging device according to claim 2 , further comprising the step of:

removing the resist mask using an organic solvent or a combination of an ashing process and an organic solvent.

5. The method of manufacturing a solid-state imaging device according to claim 4 , further comprising the steps of:

forming a final on-chip microlens by etching back the whole surface after removing the resist mask; and

simultaneously removing the insulating interlayer at the bottom of the primary opening to form a final opening that exposes the signal circuit wire bonded.

6. The method of manufacturing the solid-state imaging device according to claim 1 , further comprising the step of removing the resist mask after forming the secondary opening.

7. The method of manufacturing a solid-state imaging device according to claim 6 , further comprising the steps of:

forming a final on-chip microlens by etching back the whole surface after removing the resist mask, and

simultaneously removing the insulating interlayer at the bottom of the secondary opening to form a final opening that exposes the signal circuit wire-bonded.

8. The method of manufacturing a solid-state imaging device according to claim 7 , wherein

the semiconductor substrate in the primary opening is etched using a gas mixture of SF 6 and O 2 , and the resist mask is removed using an organic solvent or a combination of an ashing process and an organic solvent.

9. A method of manufacturing an electronic apparatus, where a signal circuit is formed on an insulating interlayer on a first side of a semiconductor substrate on which a photoelectric conversion part is formed and light is incident on the photoelectric conversion part from a second side thereof, the method comprising the steps of:

forming an on-chip color filter and an on-chip microlens on the second side where light is incident;

forming an opening in a pad part on the second side where light is incident, after forming the on-chip color filter and the on-chip microlens; and

selectively dry etching and removing the semiconductor substrate from the surface of the semiconductor substrate to reach an upper surface of the insulating interlayer at a portion corresponding to the opening through a resist mask formed on the on-chip microlens.