IP Library Granted Patent US 7,754,519
Granted Patent B1
US 7,754,519 · App. 12/465,351 · Granted Jul 13, 2010

Methods of forming a photovoltaic cell

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Quick Facts
Patent No.
US 7,754,519
App. No.
12/465,351
Granted
Jul 13, 2010
Kind
B1
Abstract

In some embodiments, a method of forming a photovoltaic cell includes (1) forming a cleave plane in a donor body so as to define a lamina to be bonded to a receiver element and exfoliated from the donor body; (2) prior to bonding, pre-heating the donor body without the receiver element to a temperature of greater than about 200° C. for a first time period that is less than a time period required for exfoliation of the lamina from the donor body; (3) cooling the donor body after pre-heating the donor body; (4) bonding the donor body to the receiver element; and (5) heating the bonded donor body and receiver element for a second time period so as to complete the exfoliation of the lamina from the donor body. Numerous other aspects are provided.

Claims (22)

1. A method comprising:

forming a cleave plane in a donor body so as to define a lamina to be bonded to a receiver element and exfoliated from the donor body;

after forming the cleave plane, pre-heating the donor body in a first chamber in an inert environment for a first time period that is less than a time period required for exfoliation of the lamina from the donor body, wherein the first chamber is a batch chamber capable of pre-heating two or more donor bodies at once, wherein pre-heating is performed at a temperature in the range from about 350 to about 500° C.;

after pre-heating the donor body, heating the donor body and the receiver element in a second chamber;

bonding the donor body to the receiver element within the second chamber; and

heating the bonded donor body and receiver element for a second time period so as to complete the exfoliation of the lamina from the donor body;

wherein the first time period is from about 5 minutes to about 4 hours and wherein the second time period is from about 2 to about 60 minutes.

2. The method of claim 1 wherein heating the bonded donor body and receiver element is performed in the second chamber.

3. The method of claim 1 wherein heating the bonded donor body and receiver element is performed in a third chamber.

4. The method of claim 1 and wherein at least one of bonding and heating the bonded donor body and receiver element is performed at a temperature in the range of about 400 to about 475° C.

5. A method of forming a photovoltaic cell, the method comprising:

providing a semiconductor donor body;

implanting a species into the donor body so as to form a cleave plane in the donor body, the cleave plane defining a lamina to be bonded to a receiver element and exfoliated from the donor body;

after the implanting step, pre-heating the donor body in an inert environment in a first chamber, wherein the first chamber is a batch chamber capable of pre-heating two or more donor bodies at once, for a first time period that is less than a time period required for exfoliation of the lamina from the donor body;

after pre-heating the donor body, heating the donor body and the receiver element in a second chamber;

bonding the donor body to the receiver element within the second chamber; and

heating the bonded donor body and receiver element for a second time period so as to complete the exfoliation of the lamina from the donor body;

wherein the first time period is at least as long as the second time period.

6. The method of claim 5 further comprising fabricating the photovoltaic cell using at least a portion of the lamina.

7. The method of claim 5 wherein the first time period is at least three times as long as the second time period.

8. The method of claim 7 wherein the first time period is at least six times as long as the second time period.

9. The method of claim 5 wherein preheating is performed at a first temperature and heating the bonded donor body and receiver element is performed at a second temperature that is less than or equal to the first temperature.

Assignments (5)
CHANGE OF NAME Recorded May 16, 2023
From: NEUTRON THERAPEUTICS, INC.
To: NEUTRON THERAPEUTICS LLC
Reel/Frame 063662/0362 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Nov 4, 2015
From: GTAT CORPORATION D/B/A GT ADVANCED TECHNOLOGIES
To: NEUTRON THERAPEUTICS INC.
Reel/Frame 037047/0004 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Nov 9, 2012
From: SILICON VALLEY BANK; TWIN CREEKS TECHNOLOGIES, INC.
To: GTAT CORPORATION
Reel/Frame 029275/0076 →
SECURITY INTEREST Recorded Sep 28, 2012
From: TWIN CREEKS TECHNOLOGIES, INC.
To: SILICON VALLEY BANK
Reel/Frame 029124/0057 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded May 14, 2009
From: TOLLES, ROBERT D.; AGARWAL, ADITYA; LELAND, ORION
To: TWIN CREEKS TECHNOLOGIES, INC.
Reel/Frame 022684/0392 →