Formation of silicon sheets by impinging fluid
View Patent ↗Techniques are generally disclosed for forming crystalline bodies. An example system, device or method for forming crystalline bodies may include a crucible for containing molten crystalline material and a support for accommodating a seed on an end thereof, the support being movable along a translation axis in a pull direction to draw the seed crystal from the molten crystalline, thereby initiating growth of a crystalline body along a growth path. Further examples may include one or more nozzles configured to be coupled to a fluid source, the nozzles being positioned relative to the growth path for shaping the crystal body as the molten crystalline is pulled in the pull direction along the growth path.
1. A method for manufacturing crystalline bodies and devices from crystalline bodies using a seed crystal, a molten crystalline material and a fluid, the method comprising:
providing a support for accommodating the seed on an end thereof, the support being movable along a translation axis in a pull direction;
raising the support in the pull direction from a position in which the seed is at least partially immersed in the molten crystalline material, thereby drawing the seed crystal from the molten crystalline to initiate growth of a crystalline body;
positioning one or more nozzles relative to the crystalline body, wherein the crystalline body includes a molten portion and a solid portion;
heating the fluid to approximately the melting point of the crystalline material; and
forcing the fluid upon a surface of the growing crystalline body to expand the crystalline body in length, including discharging the fluid through the one or more nozzles to the surface of the crystalline body such that the fluid discharged from the one or more nozzles impinges upon the molten portion, and
wherein the heating occurs prior to forcing the fluid upon the surface of the growing crystalline body.
2. The method of claim 1 ,
wherein discharging the fluid further comprises discharging the fluid in a direction generally opposite the pull direction.
3. The method of claim 2 , wherein discharging the fluid further comprises discharging the fluid through a discharge opening in the one or more nozzles that is substantially elongated in shape.
4. The method of claim 2 , wherein discharging the fluid further comprises discharging the fluid through a discharge opening in the one or more nozzles that is configured as a linear opening for forming the crystalline body into a generally flat sheet.
5. The method of claim 1 , wherein the support comprises an elongated cross-section.
6. The method of claim 1 , wherein the fluid comprises an inert gas.
7. The method of claim 1 , wherein the molten crystalline material comprises silicon.
8. The method of claim 1 , the method further comprising varying one or more of a flow rate associated with forcing the fluid upon the surface, a temperature of the fluid, and a pull rate associated with raising the support in the pull direction.
9. The method of claim 1 , the method further comprising using a surface of the crystalline body as a substrate for making a microelectronic device, the surface having a surface normal that pointed in a direction which was substantially perpendicular to the translation axis during raising of the support.