Organic light emitting device and manufacturing method thereof
View Patent ↗The present invention relates to an organic light emitting device and a manufacturing method thereof. A method of manufacturing an organic light emitting device according to an exemplary embodiment of the present invention includes: respectively forming first, second, and third driving transistors in a first region, a second region, and a third region on a substrate; forming an insulating layer on the first to third driving transistors; respectively forming first, second, and third pixel electrodes on the insulating layer, the first, second, and third pixel electrodes being formed in the first, second, and third regions, respectively; forming an auxiliary electrode on a side surface of each of the first, second, and third pixel electrodes; forming an organic light emitting member on the first to third pixel electrodes; and forming a common electrode on the organic light emitting member.
1. An organic light emitting device, comprising:
a substrate comprising a first region, a second region, and a third region;
a first driving transistor, a second driving transistor, and a third driving transistor arranged on the substrate and respectively disposed in the first region, the second region, and the third region;
an insulating layer arranged on the first driving transistor, the second driving transistor, and the third driving transistor;
a first pixel electrode, a second pixel electrode, and a third pixel electrode arranged on the insulating layer, and respectively disposed in the first region, the second region, and the third region;
a first auxiliary electrode, a second auxiliary electrode, and a third auxiliary electrode respectively covering a side wall of the first pixel electrode, the second pixel electrode, and the third pixel electrode;
an organic light emitting member arranged on the first pixel electrode, the second pixel electrode, and the third pixel electrode; and
a common electrode arranged on the organic light emitting member.
2. The organic light emitting device of claim 1 , further comprising:
a light path length control electrode arranged on at least one of the first pixel electrode, the second pixel electrode, and the third pixel electrode.
3. The organic light emitting device of claim 2 , wherein the auxiliary electrode comprises amorphous indium tin oxide (ITO) or amorphous indium zinc oxide (IZO).
4. The organic light emitting device of claim 3 , wherein a thickness of the auxiliary electrode is in the range of about 700 to about 800 Å.
5. The organic light emitting device of claim 2 , wherein a thickness of the auxiliary electrode is in the range of about 700 to about 800 Å.
6. The organic light emitting device of claim 1 , wherein the auxiliary electrode comprises amorphous indium tin oxide (ITO) or amorphous indium zinc oxide (IZO).
7. The organic light emitting device of claim 6 , wherein a thickness of the auxiliary electrode is in the range of about 700 to about 800 Å.
8. The organic light emitting device of claim 1 , wherein a thickness of the auxiliary electrode is in the range of about 700 to about 800 Å.
9. The organic light emitting device of claim 1 , wherein the first pixel electrode, the second pixel electrode, and the third pixel electrode each comprise a metal layer and a transparent conductor layer arranged on the metal layer.
10. The organic light emitting device of claim 9 , wherein the metal layer comprises silver or aluminum.
11. The organic light emitting device of claim 2 , wherein the light path length control electrode is contacted with at least one of the first auxiliary electrode, the second auxiliary electrode and the third auxiliary electrode.
12. The organic light emitting device of claim 9 , wherein the first pixel electrode, the second pixel electrode, and the third pixel electrode further comprise a metal oxide layer arranged under the metal layer.
13. The organic light emitting device of claim 12 , wherein the transparent conductor layer, the metal layer, and the metal oxide layer all have the same planar shape.
14. The organic light emitting device of claim 1 , further comprising:
a color filter arranged between the first driving transistor, the second driving transistor, and the third driving transistor, and the pixel electrode.
15. A method for manufacturing an organic light emitting device, comprising:
respectively forming a first driving transistor, a second driving transistor, and a third driving transistor in a first region, a second region, and a third region on a substrate;
forming an insulating layer on the first driving transistor, the second driving transistor, and the third driving transistor;
forming a first pixel electrode, a second pixel electrode, and a third pixel electrode on the insulating layer, the first pixel electrode, the second pixel electrode, and the third pixel electrode being formed in the first region, the second region, and the third region, respectively;
forming an auxiliary electrode on a side wall of each of the first pixel electrode, the second pixel electrode, and the third pixel electrode;
forming an organic light emitting member on the first pixel electrode, the second pixel electrode, and the third pixel electrode; and
forming a common electrode on the organic light emitting member.
16. The method of claim 15 , wherein
forming the auxiliary electrode on the side wall of each of the first pixel electrode, the second pixel electrode, and the third pixel electrode comprises:
depositing a first transparent conductor on the first pixel electrode, the second pixel electrode, and the third pixel electrode; and
patterning the first transparent conductor.
17. The method of claim 15 , further comprising:
forming at least one light path length control electrode on the first pixel electrode, the second pixel electrode, and the third pixel electrode.
18. The method of claim 17 , wherein the auxiliary electrode and the light path length control electrode are simultaneously formed.
19. The method of claim 18 , wherein the auxiliary electrode comprises indium tin oxide (ITO) or indium zinc oxide (IZO).
20. The method of claim 19 , wherein a thickness of the auxiliary electrode is in the range of about 700 to about 800 Å.
21. The organic light emitting device of claim 1 , wherein each pixel electrode comprises a first, second, and third layer, and the auxiliary electrodes contact side walls of the first, second, and third layers and a top surface of the third layer.
22. The organic light emitting device of claim 1 , wherein the first and third auxiliary electrodes expose central portions of the first and third pixel electrodes, respectively, and the second auxiliary electrode does not expose the central portion of the second pixel electrode.
23. The organic light emitting device of claim 1 , wherein the organic light emitting member is arranged directly on only the second auxiliary electrode of the first, second, and third auxiliary electrodes.
24. The method of claim 15 , wherein each pixel electrode comprises a first, second, and third layer, and the auxiliary electrodes contact side walls of the first, second, and third layers and a top surface of the third layer.
25. The method of claim 15 , wherein the auxiliary electrode formed on the first and third pixel electrodes exposes central portions of the first and third pixel electrodes, respectively, and the auxiliary electrode formed on the second pixel electrode does not expose the central portion of the second pixel electrode.
26. The method of claim 15 , wherein the organic light emitting member is arranged directly on only the auxiliary electrode formed on the second pixel electrode.