Dual damascene process for producing a PMR write pole
View Patent ↗Methods of forming a write pole are disclosed. A structure comprising a bottom insulating layer and a top insulating layer is provided. A top damascene trench is formed in the top insulating layer, and a bottom damascene trench is formed in the bottom insulating layer. The bottom damascene trench and a portion of the top damascene trench are filled with a pole material. The top insulating layer and a portion of the pole material located above the bottom damascene trench are removed.
1. A method of forming a write pole, the method comprising:
providing a structure comprising a bottom insulating layer and a top insulating layer separated by a bottom etch mask;
forming a top damascene trench in the top insulating layer that extends vertically from the top of the bottom etch mask and a bottom damascene trench in the bottom insulating layer that extends vertically to the top of the bottom etch mask;
filling the bottom damascene trench and a portion of the top damascene trench with a pole material; and
removing the top insulating layer until the bottom etch mask is reached and removing the pole material located above the bottom damascene trench and within the top damascene trench until the bottom etch mask is reached.
2. The method of claim 1 , wherein the bottom etch mask comprises a first patterned opening over the bottom insulating layer, and the bottom damascene trench is formed below the first patterned opening.
3. The method of claim 2 , further comprising providing a top etch mask layer having a second patterned opening over the top insulating layer, wherein the top damascene trench is formed below the second patterned opening.
4. The method of claim 3 , wherein the second patterned opening is located over the first patterned opening.
5. The method of claim 3 , wherein a deposition process by which the bottom damascene trench and a portion of the top damascene trench are filled with the pole material also deposits a pole material above the top etch mask layer.
6. The method of claim 5 , further comprising patterning a pole material protrusion from the pole material deposited above the top etch mask layer.
7. The method of claim 6 , further comprising removing the pole material protrusion prior to removing the top insulating layer and the portion of the pole material located above the bottom damascene trench.
8. The method of claim 1 , wherein the bottom insulating layer and the top insulating layer comprise Al 2 O 3 .
9. The method of claim 1 , wherein the pole material comprises an element selected from the group consisting of cobalt (Co), nickel (Ni), and iron (Fe).
10. The method of claim 1 , wherein removing the top insulating layer and the portion of the pole material located above the bottom damascene trench comprises performing a chemical-mechanical planarization (CMP) process.