Liquid crystal display with wide viewing angle with overlapping coupling electrodes forming capacitor interconnecting sub-pixel electrodes

1. A method of manufacturing an active matrix substrate comprising:

forming a transistor, wherein the transistor comprises a gate line, a semiconductor layer, an insulating layer between the gate line and the semiconductor layer, a source electrode, and a drain electrode;

forming a pixel electrode comprising a first sub-pixel electrode and a second sub-pixel electrode;

forming an auxiliary coupling electrode connected to the second sub-pixel electrode through a first contact hole; and

forming the first sub-pixel electrode through a second contact hole connected to the drain electrode of the transistor,

wherein the auxiliary coupling electrode and the first sub-pixel electrode overlap each other such that the second sub-pixel electrode is capacitively coupled to the first sub-pixel electrode and the auxiliary coupling electrode and the electrode part form a capacitor.

2. The method of manufacturing the active matrix substrate of claim 1 comprising forming a coupling electrode connected to the drain electrode of the transistor and the first sub-pixel electrode through a second contact hole.

3. The method of manufacturing the active matrix substrate of claim 1 further comprising forming a insulating layer between the auxiliary coupling electrode and the first sub-pixel electrode.

4. The method of manufacturing the active matrix substrate of claim 3 , wherein the insulating layer comprises silicon nitride.

5. The method of manufacturing the active matrix substrate of claim 3 , wherein the insulating layer comprises a color filter layer.

6. The method of manufacturing the active matrix substrate of claim 3 , wherein the insulating layer comprises a first protective layer and a second protective layer.

7. The method of manufacturing the active matrix substrate of claim 6 , wherein the first protective layer comprises silicon nitride, and the second protective layer comprises a polymer.

8. The method of manufacturing the active matrix substrate of claim 7 , wherein the second protective layer is thicker than the first protective layer.

9. The method of manufacturing the active matrix substrate of claim 1 , wherein the semiconductor layer of the transistor extends such that a portion of the semiconductor layer has the same boundary as the second electrode.

10. The method of manufacturing the active matrix substrate of claim 1 , wherein the first sub-pixel electrode and the second sub-pixel electrode have chevron shape.

11. A method of manufacturing a liquid crystal display comprising;

preparing an active matrix substrate;

a patterned substrate disposed opposite to the active matrix substrate; and

a liquid crystal layer interposed between the active matrix substrate and the patterned substrate,

wherein the active matrix substrate comprises:

forming a transistor, wherein the transistor comprises a gate line, a semiconductor layer, an insulating layer between the gate line and the semiconductor layer, a source electrode, and a drain electrode;

forming a pixel electrode comprising a first sub-pixel electrode and a second sub-pixel electrode;

forming an auxiliary coupling electrode connected to the second sub-pixel electrode through a first contact hole; and

forming a coupling electrode connected to the drain electrode of the transistor and the first sub-pixel electrode,

wherein the auxiliary coupling electrode overlaps and is coupled to the coupling electrode such that the second sub-pixel electrode is capacitively coupled to the first sub-pixel electrode and the auxiliary coupling electrode and the coupling electrode forms a capacitor.

12. The method of manufacturing the liquid crystal display of claim 11 comprising forming the coupling electrode connected to the drain electrode of the transistor and the first sub-pixel electrode through a second contact hole.

13. The method of manufacturing the liquid crystal display of claim 11 further comprising forming a insulating layer between the coupling electrode and the pixel electrode.

14. The method of manufacturing the liquid crystal display of claim 13 , wherein the insulating layer comprises silicon nitride.

15. The method of manufacturing the liquid crystal display of claim 13 , wherein the insulating layer comprises a color filter layer.

16. The method of manufacturing the liquid crystal display of claim 13 , wherein the insulating layer comprises a first protective layer and a second protective layer.

17. The method of manufacturing the liquid crystal display of claim 16 , wherein the first protective layer comprises silicon nitride, and the second protective layer comprises a polymer.

18. The method of manufacturing the liquid crystal display of claim 13 , wherein the semiconductor layer extends such that a portion of the semiconductor layer of the transistor has the same boundary as the second electrode.

19. The method of manufacturing the liquid crystal display of claim 11 , wherein the patterned substrate has an aperture that divides the liquid crystal layer into a plurality of domains.

20. The method of manufacturing the liquid crystal display of claim 19 , wherein the first sub-pixel electrode and the second sub-pixel electrode have chevron shape.