Imaging array with dual height semiconductor and method of making same

1. An imaging array comprising:

an insulating substrate;

a plurality of pixels arranged in row and columns, each pixel including a photosensitive element and at least one readout element, where the photosensitive element and at least one readout element are co-planar;

a thin single-crystal silicon substrate bonded to the insulating substrate, the thin single-crystal silicon substrate configured to form semiconductive portions of both the photosensitive element and the at least one readout element in the plurality of pixels, where the thin single-crystal silicon substrate is thicker in the photosensitive element than in the at least one readout element, said semiconductive portions of thin single-crystal silicon substrate in the photosensitive elements having a first height measured from the insulating substrate and the semiconductive portions of thin single-crystal silicon substrate in the at least one readout elements having a second height measured from the insulating substrate, where the first height is different than the second height; and

a bonding dielectric layer to secure the insulating substrate to the single-crystal silicon substrate.

2. The imaging array of claim 1 , wherein the photosensitive element is at least one of a p-n junction photodiode, a PIN junction photodiode, an MIS sensor, a pinned photodiode, a CCD, an avalanche photodiode, a photo-transistor, and a charge injection device.

3. The imaging array of claim 1 , wherein the readout element comprises at least one of a transistor, a diode switch, a CCD, a bi-polar transistor, and a field effect transistor.

4. The imaging array of claim 1 , wherein the first height is between about 50 nm and about 10 microns.

5. The imaging array of claim 4 , wherein the first height is between about 2 microns and about 5 microns.

6. The imaging array of claim 1 , wherein the second height is between about 10 nm and about 200 nm.

7. The imaging array of claim 6 , wherein the second height is between about 30 nm and about 50 nm.

8. The imaging array of claim 1 , wherein the first height is greater than the second height.

9. The imaging array of claim 1 , wherein the insulating substrate is a glass substrate.

10. The imaging array of claim 8 , wherein one or more portions of an exposed surface of the single-crystal silicon substrate opposite the insulating substrate are removed to form the pattern of the second areas having the second height less than the first height measured from the insulating substrate.

11. The imaging array of claim 1 , where the single-crystal silicon substrate forms semiconductive portions of the plurality of photosensitive elements and the plurality of readout elements, where the single-crystal silicon substrate is thicker in the plurality of photosensitive elements than the plurality of readout elements.

12. The imaging array of claim 11 , where the semiconductive portions of the single-crystal silicon substrate at the plurality of readout elements includes highly doped regions that form first and second electrodes of at least one readout transistor.

13. The imaging array of claim 11 , where the semiconductive portions of the single-crystal silicon substrate at the plurality of photosensitive elements form a highly doped N-type region and a highly doped P-type region in each of the plurality of photosensitive elements.

14. The imaging array of claim 11 , where the semiconductive portions of the single-crystal silicon substrate at the plurality of photosensitive elements form at least one highly doped region in each of the plurality of photosensitive elements.

15. The imaging array of claim 11 , where the semiconductive portions of the single-crystal silicon substrate in the plurality of photosensitive elements are stepped with distal edges thinner than a central portion of the single-crystal silicon in the plurality of photosensitive elements.

16. The imaging array of claim 1 , where a portion of the single-crystal silicon substrate is in each of the plurality of photosensitive elements and another portion of the single-crystal silicon substrate is in each the plurality of readout elements.

17. An imaging array comprising:

a silicon-on-glass technology substrate comprising,

an insulating substrate;

a single-crystal silicon substrate; and

a bonding dielectric layer to adhere the single-crystal silicon substrate to the insulating substrate,

a plurality of pixels arranged in row and columns, each pixel including a photosensitive element and at least one readout element, where the photosensitive element and at least one readout element are co-planar in the single-crystal silicon substrate, where the single-crystal silicon substrate is configured to form semiconductive portions of both the photosensitive element and the at least one readout element in said each pixel, where the single-crystal silicon substrate is thicker in the semiconductive portions of the photosensitive element than in the semiconductive portions of the at least one readout element, said semiconductive portions of single-crystal silicon substrate in the photosensitive elements having a first height measured from the insulating substrate and the semiconductive portions of single-crystal silicon substrate in the at least one readout elements having a second height measured from the insulating substrate, where the first height is different than the second height;

the plurality of photosensitive elements, each are configured to include an additional layer; and

the plurality of readout elements, each are configured to include an additional layer.

18. An imaging array comprising:

an insulating substrate;

a single-crystal silicon substrate bonded to the insulating substrate, the single-crystal silicon substrate having a pattern of pixels, each pixel including a photosensitive element at first areas and at least one readout element at second areas, the first areas having a first height measured from the insulating substrate and the second areas having a second height measured from the insulating substrate, where the first height is different than the second height;

a bonding dielectric layer between the insulating substrate and the single-crystal silicon substrate,

where the single-crystal silicon substrate forms semiconductive portions of the plurality of photosensitive elements and the plurality of readout elements, where the single-crystal silicon substrate is thicker in the plurality of photosensitive elements than the plurality of readout elements, and where the semiconductive portions of the single-crystal silicon substrate in the plurality of photosensitive elements are stepped with distal edges thinner than a central portion of the single-crystal silicon in the plurality of photosensitive elements.