Display device
View Patent ↗An object of the present invention is to provide a display device where a semiconductor layer pattern formed between a pair of electrodes can be formed to a predetermined size, even in the case where the distance between the electrodes on top of a semiconductor layer pattern is relatively large in elements formed in accordance with a photoresist reflow technology. The present invention provides a display device where elements are formed on an insulating substrate, characterized in that the above described elements comprise: a semiconductor layer pattern formed on a main surface of the above described insulating substrate or an insulating film layer formed on the main surface; and a number of electrodes provided in parallel at a distance from each other on the above described semiconductor layer pattern, the above described number of electrodes are a first electrode, a second electrode and dummy electrodes located between the first electrode and the second electrode, and the above described number of electrodes are patterned so that a protrusion is formed, in which the above described electrodes are aligned at on least one end side of at least one of the facing sides.
1. A display device where elements are formed on an insulating substrate, characterized in that
said elements comprise:
a semiconductor layer pattern formed on a main surface of said insulating substrate or on an insulating film layer formed on the main surface; and
a number of electrodes provided in parallel at a distance from each other on said semiconductor layer pattern,
said number of electrodes having facing sides and being a first electrode, a second electrode and dummy electrodes located between the first electrode and the second electrode, wherein
said number of electrodes are patterned so that a protrusion is formed, in which said electrodes are aligned, on at least one end side of at least one of the facing sides.
2. The display device according to claim 1 , characterized in that a dummy electrode has a pattern where two ends protrude from a center in one direction in which electrodes are aligned.
3. The display device according to claim 1 , characterized in that a dummy electrode has a pattern where one end protrudes from a center in one direction in which electrodes are aligned and another end protrudes in an opposite direction in which electrodes are aligned.
4. The display device according to claim 1 , characterized in that a dummy electrode has a pattern where a center protrudes in one direction in which electrodes are aligned and two ends protrude in the other direction in which electrodes are aligned.
5. The display device according to claim 1 , characterized in that a dummy electrode has a pattern where one end protrudes from a center in one direction in which electrodes are aligned and another end protrudes in an opposite direction in which electrodes are aligned.
6. The display device according to claim 1 , characterized in that said elements are thin film transistors where said first electrode is either the source electrode or the drain electrode and the second electrode is the other, and a gate electrode is provided beneath said insulating film.
7. The display device according to claim 1 , characterized in that
a display region is formed of a number of pixels on said insulating substrate and
said elements are formed outside said display region as resistor elements.
8. The display device according to claim 1 , characterized in that said insulating film is made of silicon nitride, silicon oxide or silicon nitride oxide, and said semiconductor layer pattern is made of amorphous silicon or crystalline silicon.
9. The display device according to claim 1 , characterized in that
each of said electrodes is formed of an impurity semiconductor layer and a metal layer layered on top of the semiconductor layer, and
said impurity semiconductor layer is added is formed as an ohmic contact layer.
10. The display device according to claim 1 , characterized in that said electrodes are formed so as to have one of the following structures:
a one-layer structure of chromium, a chromium alloy, tungsten, a tungsten alloy, titanium, a titanium alloy, molybdenum, a molybdenum, an aluminum alloy or a copper alloy;
a two-layer structure of an aluminum alloy and chromium or a chromium alloy;
a two-layer structure of an aluminum alloy and tungsten or a tungsten alloy;
a two-layer structure of an aluminum alloy and titanium or a titanium alloy;
a two-layer structure of an aluminum alloy and molybdenum or a molybdenum alloy;
a two-layer structure of a copper alloy and chromium or a chromium alloy;
a two-layer structure of a copper alloy and tungsten or a tungsten alloy;
a two-layer structure of a copper alloy and titanium or a titanium alloy;
a two-layer structure of a copper alloy and molybdenum or a molybdenum alloy;
a three-layer structure an aluminum alloy between two layers of chromium or a chromium alloy;
a three-layer structure of an aluminum alloy between two layers of tungsten or a tungsten alloy;
a three-layer structure of an aluminum alloy between two layers of molybdenum or a molybdenum alloy;
a three-layer structure of a copper alloy between two layers of chromium or a chromium alloy;
a three-layer structure of a copper alloy between two layers of tungsten or a tungsten alloy;
a three-layer structure of a copper alloy between two layers of titanium or a titanium alloy;
a three-layer structure of a copper alloy between two layers of molybdenum or a molybdenum alloy.