IP Library Granted Patent US 8,394,282
Granted Patent B2
US 8,394,282 · App. 12/479,200 · Granted Mar 12, 2013

Adaptive nanotopography sculpting

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Quick Facts
Patent No.
US 8,394,282
App. No.
12/479,200
Granted
Mar 12, 2013
Kind
B2
Abstract

Adaptive imprint planarization provides a surface having desired shape characteristics. Generally, topography of a first surface is mapped to provide a density map. The density map is evaluated to provide a drop pattern for dispensing polymerizable material on the first surface. The polymerizable material is solidified and etched to provide a second surface having the desired shape characteristics. Additionally, adaptive imprint planarization compensates for parasitic effects of the imprinting process.

Claims (49)

1. A method of forming a surface having desired shape characteristic using an imprint lithography system, comprising:

determining nanotopography of a first surface;

determining desired shape characteristic for a second surface;

evaluating the nanotopography of the first surface and the desired shape characteristic for the second surface to provide a drop pattern;

depositing polymerizable material between a template and the first surface according to the drop pattern;

contacting the template to the polymerizable material;

solidifying the polymerizable material;

etching the polymerizable material to provide the second surface having the desirable shape characteristic.

2. The method of claim 1 , further comprising determining at least one parasitic effect and adjusting the drop pattern to compensate for the parasitic effect.

3. The method of claim 2 , wherein the parasitic effect is evaporation of the polymerizable material.

4. The method of claim 2 , wherein the parasitic effect is variation in pattern density.

5. The method of claim 2 , wherein the parasitic effect is etching non-uniformity.

6. The method of claim 2 , wherein the parasitic effect is polishing non-uniformity.

7. The method of claim 2 , wherein the parasitic effect is volume shrinkage.

8. The method of claim 1 , wherein etching the polymerizable material alters the nanotopography and roughness of the first surface.

9. The method of claim 1 , wherein the desired shape characteristic of the second surface is planar.

10. The method of claim 1 , wherein the desired shape characteristic of the second surface is non-planar.

11. The method of claim 1 , wherein depositing polymerizable material between a template and the first surface according to the drop pattern further comprises:

depositing a first polymerizable material having a first etch rate and depositing a second polymerizable material having a second etch rate; and,

adjusting the drop pattern to compensate for the first etch rate and the second etch rate.

12. The method of claim 11 , wherein the first etch rate and the second etch rate are different.

13. The method of claim 1 , wherein evaluating the nanotopography of the first surface and the desired shape characteristic for the second surface to provide the drop pattern further comprises:

evaluating the differences between the nanotopography of the first surface and the desired shape characteristic for the second surface to provide a height correction map;

providing a density map based on the height correction map; and,

using the density map to determine the drop pattern.

14. A method of forming a surface having desired nanotopography using an imprint lithography system, comprising:

determining nanotopography of a surface;

evaluating the nanotopography of the surface to determine height correction between the nanotopography of the surface as compared to a desired nanotopography;

providing a density map based on the height correction between the nanotopography of the surface as compared to the desired nanotopography;

determining a drop pattern based on the density map;

depositing polymerizable material between an imprint lithography template and the surface according to the drop pattern;

contacting the template to the polymerizable material;

solidifying the polymerizable material;

etching the polymerizable material to provide the surface with the desired nanotopography.

15. The method of claim 14 , further comprising determining at least one parasitic effect and adjusting the drop pattern to compensate for the parasitic effect.

16. The method of claim 14 , wherein the desired nanotopography is planar.

17. The method of claim 14 , wherein the surface is non-planar and etching the polymerizable material provides the surface with planar topography while maintaining the nominal non-planar surface.

18. A method of forming a planar surface using an imprint lithography system, comprising:

determining nanotopography of a surface;

evaluating the nanotopography of the surface to determine a drop pattern to provide the planar surface for a first polymerizable material having a first etch rate and a second polymerizable material having a second etch rate;

depositing the first polymerizable material and the second polymerizable material between an imprint lithography template and the surface according to the drop pattern;

contacting the template to at least one of the first polymerizable material and the second polymerizable material;

solidifying at least one of the first polymerizable material and the second polymerizable material;

etching at least one of the first polymerizable material and the second polymerizable material to provide the planar surface.

19. The method of claim 18 , further comprising determining at least one parasitic effect and adjusting the drop pattern to compensate for the parasitic effect.

20. The method of claim 18 , wherein evaluating the nanotopography of the surface to determine a drop pattern further comprises:

evaluating the nanotopography of the surface to determine height correction between the nanotopography of the surface as compared to the planar surface to be formed;

providing a density map based on the height correction; and,

determining the drop pattern based on the density map.

Assignments (3)
ASSIGNMENT OF SECURITY INTEREST IN PATENTS Recorded Nov 7, 2019
From: JPMORGAN CHASE BANK, N.A.
To: CITIBANK, N.A.
Reel/Frame 050967/0138 →
PATENT SECURITY AGREEMENT Recorded Aug 22, 2019
From: MAGIC LEAP, INC.; MOLECULAR IMPRINTS, INC.; MENTOR ACQUISITION ONE, LLC
To: JP MORGAN CHASE BANK, N.A.
Reel/Frame 050138/0287 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Sep 23, 2009
From: PANGA, AVINASH; SREENIVASAN, SIDLGATA V.
To: BOARD OF REGENTS, THE UNIVERSITY OF TEXAS SYSTEM
Reel/Frame 023269/0759 →