C0G multi-layered ceramic capacitor

1. A capacitor formed by the method of:

milling to a D50 of less than 1.0 μm a material consisting essentially of:

[(CaO) t (SrO) 1-t ] m [(ZrO 2 ) v (TiO 2 ) 1-v ]

wherein m is 0.98 to 1.02; and

t is ≧0.50 to 0.90; and

v is 0.8 to 1.0;

thereby forming a first component (C1);

milling a material consisting essentially of at least one of MnO 2 , MnCO 3 or another oxidized form of Mn to a D50 of less than 1.0 μm thereby forming a second component (C2);

milling a material consisting essentially of SiO 2 to a D50 of less than 0.50 μm thereby forming a third component (C3);

forming a coating solution comprising a solvent and a ceramic component consisting essentially of said first component, said second component and said third component in a ratio C1 1-α-β C2 α C3 β ;

applying said coating solution to a tape in an amount selected from the group consisting of a) sufficient to form a ceramic layer over 4.5 μm thick wherein α and β are defined as 0.000186≦β≦0.08, 0.0001≦α≦0.043 and β>1.86α; and b) sufficient to form a ceramic layer of no more than 4.5 μm thick wherein α and β are defined as 0.0000667≦β≦0.0533, 0.0001≦α≦0.08 and β<0.667α;

drying said coating solution to form a green coating;

depositing an ink comprising electrode material over said green coating to form electroded green layers;

stacking non-electroded green layers and electroded green layers to form a green capacitor stack;

dicing said capacitor stack to form singular green multilayer chips;

firing said singular green multilayer chips in an atmosphere with a PO 2 of 10 −6 to 10 −16 atm; and

forming terminals in electrical contact with said electrode material.

2. The capacitor according to claim 1 which has a temperature coefficient of capacitance of ≦+/−30 ppm/° C.

3. The capacitor according to claim 1 wherein said firing is at a temperature not to exceed 1350° C.