IP Library Granted Patent US 8,422,522
Granted Patent B2
US 8,422,522 · App. 12/485,680 · Granted Apr 16, 2013

Semiconductor laser device

View Patent ↗
Loading inventors, assignments & file history…
Monitor This Case
Get email alerts when status or documents change.
Order Certified Copies
Most orders are placed with the USPTO same day — all within 24 business hours.
Order via The Patent Place →
Pre-filled with this patent's details
Quick Facts
Patent No.
US 8,422,522
App. No.
12/485,680
Granted
Apr 16, 2013
Kind
B2
Abstract

In a semiconductor laser device, a first lead has a mounting portion for mounting a semiconductor laser element on its top surface via a submount member, and a lead portion extending from the mounting portion. Given that a direction in which a primary beam is emitted from the laser element is defined as a forward direction, and that a direction vertical to the forward direction and parallel to the top surface of the mounting portion is defined as a lateral direction, the first lead has, in one region of a side face of the mounting portion, a lateral reference surface which is parallel to a side face of the semiconductor laser element and flat. In the one region of the side face of the mounting portion, a recess portion is formed adjacent to the lateral reference surface.

Claims (31)

1. A semiconductor laser device comprising:

a semiconductor laser element;

a first lead having a mounting portion for mounting the semiconductor laser element on a top surface of the mounting portion via a submount member, and a lead portion extending from the mounting portion;

a second lead extending along the lead portion of the first lead; and

a holding portion made of an insulative material for integrally holding the first lead and the second lead, wherein

given that a direction in which a primary beam is emitted from the semiconductor laser element is defined as a forward direction, a direction vertical to the forward direction and parallel to the top surface of the mounting portion is defined as a lateral direction, and that a direction vertical to the top surface of the mounting portion is defined as an up/down direction,

the first lead has, in one region of a side face of the mounting portion, a lateral reference surface which is parallel to a side face of the semiconductor laser element and which is flat, and in the one region of the side face of the mounting portion, a recess portion is provided adjacent to the lateral reference surface, and wherein

a cut-and-raised portion is formed by cutting and upwardly raising a region of the mounting portion other than a region where the semiconductor laser element is mounted, and

spaces formed in the mounting portion by the formation of the cut-and-raised portion are filled with the material of the holding portion; the mounting portion has a part of a protrusive shape at its rear side, an upper surface of the semiconductor laser element and the part having the protrusive shape are connected to each other with a wire.

2. The semiconductor laser device as claimed in claim 1 , wherein

a bottom surface of the mounting portion is exposed from the holding portion and has an up/down reference surface which is parallel to a bottom surface of the semiconductor laser element and which is flat, and

given that a direction running from the semiconductor laser element toward the mounting portion is defined as a downward direction, a lower surface of the holding portion and the up/down reference surface are coplanar with each other.

3. The semiconductor laser device as claimed in claim 2 , wherein

a lower surface of the semiconductor laser device consists of the lower surface of the holding portion and the up/down reference surface of the first lead, and

the lower surface of the holding portion is positioned rearward of the up/down reference surface.

4. The semiconductor laser device as claimed in claim 1 , wherein

the top surface of the mounting portion of the first lead, a bottom surface of the lead portion of the first lead, and a bottom surface of the second lead are coplanar with one another.

5. The semiconductor laser device as claimed in claim 1 , wherein

the mounting portion of the first lead, the lead portion of the first lead, and the second lead are equal in up/down direction thickness to one another.

6. The semiconductor laser device as claimed in claim 1 , wherein

the holding portion has a frame portion around the semiconductor laser element,

a window portion for emitting a primary beam from the semiconductor laser element is formed in the frame portion, and

given that an inside of the frame portion of the holding portion is defined as a side on which the semiconductor laser element is mounted on the mounting portion via the submount member, a tapered portion having a surface inclined with respect to the top surface of the mounting portion is provided in a location in the inside of the frame portion of the holding portion.

7. The semiconductor laser device as claimed in claim 6 , wherein

the tapered portion is located rearward of the semiconductor laser element.

8. The semiconductor laser device as claimed in claim 6 , wherein

an upper surface of the submount member and a top surface of the second lead positioned inside of the frame portion of the holding portion are connected to each other with a wire.

9. The semiconductor laser device as claimed in claim 1 , wherein

the first lead and the second lead extend through and beyond the holding portion,

a portion extending through the holding portion of the first lead has an up/down bent portion that is bent in an up/down direction, and

a portion extending through the holding portion of the second lead has a left/right bent portion that is bent in a left/right direction.

Assignments (2)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Feb 10, 2022
From: SHARP KABUSHIKI KAISHA
To: SHARP FUKUYAMA LASER CO., LTD.
Reel/Frame 059039/0927 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jun 30, 2009
From: OHKUBO, NOBUHIRO
To: SHARP KABUSHIKI KAISHA
Reel/Frame 022891/0352 →