Semiconductor device and method for manufacturing the same
A method for manufacturing a semiconductor device, includes: mounting a semiconductor chip having an electrode on a wiring substrate having a base substrate and a wiring formed on the base substrate; forming a eutectic alloy by contacting the wiring with the electrode and by heating and pressurizing, and; forming the eutectic alloy so as a part of the eutectic alloy enters between the wiring and the base substrate.
1. A method for manufacturing a semiconductor device, comprising:
mounting a semiconductor chip having an electrode on a wiring formed on a base substrate; and
forming a eutectic alloy by heating the wiring and the electrode such that a part of the eutectic alloy is disposed between the wiring and the base substrate,
wherein a part of the wiring is peeled off from the base substrate during the mounting of the semiconductor chip on the wiring; and
the part of the eutectic alloy is disposed between the part of the wiring and the base substrate during the forming of the eutectic alloy.
2. The method for manufacturing a semiconductor device according to claim 1 , wherein the eutectic alloy is formed such that the eutectic alloy avoids a region overlapping with the electrode between the wiring and the base substrate during the forming of the eutectic alloy.
3. The method for manufacturing a semiconductor device according to claim 1 , wherein the eutectic alloy is formed such that the eutectic alloy comes to contact with the electrode during the forming of the eutectic alloy.
4. A method for manufacturing a semiconductor device, comprising:
mounting a semiconductor chip having an electrode on a wiring formed on a base substrate; and
forming a eutectic alloy by heating the wiring and the electrode such that a part of the eutectic alloy is disposed between the wiring and the base substrate,
wherein a part of the wiring is peeled off from the base substrate during the mounting of the semiconductor chip on the wiring;
the part of the eutectic alloy is disposed between the part of the wiring and the base substrate during the forming of the eutectic alloy; and
the eutectic alloy is formed such that the eutectic alloy surrounds the part of the wiring during the forming of the eutectic alloy.
5. The method for manufacturing a semiconductor device according to claim 4 , wherein the eutectic alloy is formed such that the eutectic alloy avoids a region overlapping with the electrode between the wiring and the base substrate during the forming of the eutectic alloy.
6. The method for manufacturing a semiconductor device according to claim 4 , wherein the eutectic alloy is formed such that the eutectic alloy comes into contact with the electrode during the forming of the eutectic alloy.
7. A method for manufacturing a semiconductor device, comprising:
mounting a semiconductor chip having an electrode on a wiring formed on a base substrate; and
forming a eutectic alloy by heating the wiring and the electrode such that a part of the eutectic alloy is disposed between the wiring and the base substrate,
wherein a first part of a first surface of a first portion of the wiring is peeled off from the base substrate and a second part of the first surface of the first portion of the wiring is in contact with the base substrate during the mounting of the semiconductor chip on the wiring substrate, the first surface of the first portion of the wiring facing the base substrate; and
wherein the eutectic alloy is formed such that the part of the eutectic alloy is disposed between the first part of the first surface of the first portion of the wiring and the base substrate during the forming of the eutectic alloy.
8. The method for manufacturing a semiconductor device according to claim 7 , wherein the eutectic alloy is formed such that the eutectic alloy avoids a region overlapping with the electrode between the wiring and the base substrate during the forming of the eutectic alloy.
9. The method for manufacturing a semiconductor device according to claim 7 , wherein the eutectic alloy is formed such that the eutectic alloy comes to contact with the electrode during the forming of the eutectic alloy.