Electromechanical devices having etch barrier layers
View Patent ↗In one embodiment, the invention provides a method for fabricating a microelectromechanical systems device. The method comprises fabricating a first layer comprising a film having a characteristic electromechanical response, and a characteristic optical response, wherein the characteristic optical response is desirable and the characteristic electromechanical response is undesirable; and modifying the characteristic electromechanical response of the first layer by at least reducing charge build up thereon during activation of the micro electromechanical systems device.
1. An apparatus, comprising:
a substrate;
an electrode, wherein the electrode is located over the substrate;
an additional layer located over the electrode, wherein the additional layer comprises SiO 2 ,
an etch barrier layer, wherein the etch barrier layer is located over the additional layer;
an air gap, wherein the air gap is located adjacent the etch barrier layer; and
a displaceable layer, wherein the displaceable layer is reflective to incident light.
2. The apparatus of claim 1 , wherein the etch barrier layer is resistant to XeF 2 .
3. The apparatus of claim 1 , wherein the etch barrier layer comprises Al 2 O 3 .
4. The apparatus of claim 1 , wherein the apparatus is an interferometric modulator.
5. The apparatus of claim 1 , wherein the displaceable layer is electrostatically displaceable.
6. The apparatus of claim 1 , wherein the displaceable layer is displaceable through the air gap.
7. The apparatus of claim 1 , wherein the additional layer is substantially transparent.
8. A method of making the apparatus of claim 1 , comprising:
forming an electrode layer over a substrate;
forming an additional layer over the electrode layer, wherein the additional layer comprises SiO 2 ;
forming an etch barrier layer over the transparent layer; and
exposing the etch barrier layer to a chemical etchant, wherein the etch barrier layer is resistant to the chemical etchant.
9. The method of claim 8 , wherein the etch barrier layer comprises Al 2 O 3 .
10. The method of claim 8 , wherein the chemical etchant comprises XeF 2 .
11. The method of claim 8 , additionally comprising forming a displaceable layer, wherein the displaceable layer is separated from the etch barrier layer by an air gap.
12. The method of claim 8 , wherein the apparatus is an interferometric modulator.
13. The method of claim 8 , wherein the additional layer is substantially transparent.
14. An electromechanical device comprising:
a substrate;
an electrode, wherein the electrode is located on the substrate;
an air gap;
an additional layer, wherein the additional layer comprises SiO 2 , and wherein the additional layer is located between the electrode and the air gap; and
an etch barrier layer comprising Al 2 O 3 , wherein the etch barrier layer is located between the air gap and the additional layer.
15. The device of claim 14 , further comprising an electrostatically displaceable layer located on the opposite side of the air gap from the electrode.
16. The apparatus of claim 14 , additionally comprising a layer comprising Al 2 O 3 located between the additional layer and the electrode.
17. The device of claim 14 , wherein the device is an interferometric modulator.
18. The device of claim 14 , wherein the etch barrier layer is located on or adjacent the additional layer.