Thin film field effect transistor and display
A thin film field effect transistor includes at least: a substrate; and a gate electrode, a gate insulating layer, an active layer, a source electrode and a drain electrode, and a protective layer provided on the substrate in this order from the substrate side. The active layer is a layer containing an amorphous oxide containing at least one metal selected from the group consisting of In, Sn, Zn and Cd. The thin film field effect transistor further includes, between the active layer and at least one of the source electrode or the drain electrode, an electric resistance layer containing an oxide or nitride containing at least one metal selected from the group consisting of Ga, Al, Mg, Ca and Si.
1. A thin film field effect transistor comprising at least:
a substrate; and a gate electrode, a gate insulating layer, an active layer, a source electrode and a drain electrode, and a protective layer provided on the substrate in this order from the substrate side, wherein
the active layer is a layer containing an amorphous oxide containing at least one metal selected from the group consisting of In, Sn, Zn and Cd, and the thin film field effect transistor further comprises, between the active layer and at least one of the source electrode or the drain electrode, an electric resistance layer containing an oxide or nitride containing at least one metal selected from the group consisting of Ga, Al, Mg, Ca and Si,
the electric resistance layer is disposed between the protective layer and the active layer, and
at least one longitudinal end surface of the active layer along the source-drain direction is covered with the electric resistance layer, and the protective layer and the active layer do not directly contact with each other at the at least one longitudinal end surface, wherein the at least one longitudinal end surface of the active layer is a side surface that is substantially perpendicular to the substrate,
and wherein a ratio of an electric conductivity of the active layer relative to an electric conductivity of the electric resistance layer (electric conductivity of active layer/electric conductivity of electric resistance layer) is from 10 2 to 10 8 .
2. The thin film field effect transistor according to claim 1 , wherein the protective layer is a resin layer.
3. The thin film field effect transistor according to claim 1 , wherein the protective layer includes a photosensitive resin.
4. The thin film field effect transistor according to claim 1 , wherein an electric conductivity of the active layer is 10 −10 Scm −1 or more but less than 10 1 Scm −1 .
5. The thin film field effect transistor according to claim 1 , wherein the active layer comprises an amorphous oxide which contains at least In.
6. The thin film field effect transistor according to claim 5 , wherein the amorphous oxide further contains Zn.
7. The thin film field effect transistor according to claim 1 , wherein the electric resistance layer contains an oxide or nitride of at least one metal selected from the group consisting of Ga, Al and Mg.
8. The thin film field effect transistor according to claim 7 , wherein the electric resistance layer contains an oxide of at least one metal selected from the group consisting of Ga, Al and Mg.
9. The thin film field effect transistor according to claim 1 , wherein the substrate is a flexible substrate.
10. A display comprising:
a pair of electrodes;
a light-emitting element provided between the electrodes and including an organic compound layer including at least a light emitting layer; and
the thin film field effect transistor according to claim 1 , wherein the thin film filed effect transistor is capable of driving the light-emitting element.