Substrate for EUV mask blanks
View Patent ↗A substrate that is suitable for an EUV mask or an EUV mask blank and excellent in flatness, is provided. A substrate for an EUV mask blank, which is made of a silica glass containing from 1 to 12 mass % of TiO 2 , wherein the surface roughness (rms) in a surface quality area of the substrate is at most 2 nm, and the maximum variation (PV) of the stress in the surface quality area of the substrate is at most 0.2 MPa.
1. A substrate, which is made of a silica glass containing from 1 to 12 mass % of TiO 2 , wherein the surface roughness (rms) in a surface quality area of the substrate is at most 2 nm, and the standard deviation (σ) of the stress in the surface quality area of the substrate is at most 0.04 MPa.
2. A substrate, which is made of a silica glass containing from 1 to 12 mass % of TiO 2 , wherein the surface roughness (rms) in a surface quality area of the substrate is at most 2 nm, and the maximum variation (PV) of the stress in the surface quality area of the substrate is at most 0.2 MPa.
3. The substrate according to claim 1 , wherein the maximum variation (PV) of the stress in the surface quality area of the substrate is at most 0.2 MPa.
4. The substrate according to claim 1 , wherein the surface roughness (rms) in the surface quality area of the substrate is at most 1 nm.
5. The substrate according to claim 1 , wherein the standard deviation (σ) outside the surface quality area of the substrate is more than 0.05 MPa.
6. The substrate according to claim 1 , wherein the maximum variation (PV) of the stress outside the surface quality area of the substrate is more than 0.2 MPa.
7. The substrate according to claim 5 , wherein the maximum variation (PV) of the stress outside the surface quality area of the substrate is more than 0.2 MPa.
8. The substrate according to claim 4 , wherein the standard deviation (σ) of the stress outside the surface quality area is at least 0.02 MPa higher than the standard deviation (σ) of the stress in the surface quality area.
9. The substrate according to claim 4 , wherein the maximum variation (PV) outside the surface quality area is at least 0.1 MPa higher than the maximum variation (PV) in the surface quality area.
10. The substrate according to claim 8 , wherein the maximum variation (PV) of the stress outside the surface quality area of the substrate is at least 0.1 MPa higher than the maximum variation (PV) in the surface quality area.
11. The substrate according to claim 1 , wherein the thermal expansion coefficient of the substrate is 0±200 ppb/° C. in a temperature range of from 0 to 100° C.
12. The substrate according to claim 1 , wherein the fictive temperature of the substrate is less than 1,000° C.
13. The substrate according to claim 1 , wherein the variation of the fictive temperature in the entire substrate is at most 100° C.
14. The substrate according to claim 1 , wherein the OH group concentration in the substrate is at most 600 ppm.
15. The substrate according to claim 1 , wherein the variation of the OH group concentration in the entire substrate is at most 50 ppm.
16. The substrate according to claim 1 , wherein the variation An of the refractive index of the substrate is within 4×10 4 .
17. The substrate according to claim 1 , wherein the surface roughness (rms) in the surface quality area of the substrate is at most 0.8 nm.
18. The substrate according to claim 1 , wherein the temperature at which the thermal expansion coefficient of the substrate becomes 0 ppb/° C. is 22±3° C.
19. The substrate according to claim 1 , wherein the temperature at which the thermal expansion coefficient of the substrate becomes 0 ppb/° C. is from 40 to 100° C.
20. The substrate according to claim 1 , wherein the chlorine concentration of the substrate is at most 50 ppm.
21. The substrate according to claim 1 , wherein the fluorine concentration of the substrate is at least 100 ppm.
22. The substrate according to claim 1 , wherein the boron concentration of the substrate is at least 10 ppb.
23. The substrate according to claim 1 , wherein the hydrogen concentration of the substrate is at least 5×10 16 molecules/cm 3 .
24. The substrate according to claim 1 , wherein the Ti 3+ concentration of the substrate is at most 70 ppm.
25. The substrate according to claim 1 , wherein no concave pit of at least 60 nm is present on a surface in the surface quality area of the substrate.
26. The substrate according to claim 1 , which is produced by a two-step forming method comprising heating a transparent TiO 2 —SiO 2 glass body at a forming temperature to form a first formed body, cutting the outer periphery of the first formed body, and heating the first formed body at a forming temperature to form a second formed body.
27. The substrate according to claim 26 which is produced by a method of maintaining a formed TiO 2 —SiO 2 glass body formed into a predetermined shape, at a temperature of from 800 to 1,200° C. for 2 hours, and lowering the temperature at an average temperature-falling speed of at most 10° C./hr to a temperature of at most 700° C.
28. An EUV mask blank comprising the substrate as defined in claim 1 and a reflective layer and an absorber layer that are formed on the substrate.
29. The EUV mask blank according to claim 28 , wherein the surface roughness (rms) of the outermost layer of the EUV mask blank is at most 2 nm in the surface quality area.
30. The EUV mask blank according to claim 28 , wherein the requirement of the uniformity of the peak reflectance of the reflective layer surface in the EUV wavelength region in the entire mask blank, is within ±1.2% in the surface quality area.
31. An EUV mask comprising the substrate as defined in claim 1 , and a reflective layer and a patterned absorber layer that are formed on the substrate.
32. The EUV mask according to claim 31 , wherein the influence of EUV reflection light from the surface of the absorber layer along the outer periphery of a mask pattern area is inhibited.
33. A process for producing semiconductor integrated circuits comprising employing the EUV mask as defined in claim 31 .