Developing method for immersion lithography, solvent used for the developing method and electronic device using the developing method
View Patent ↗A developing method for immersion lithography is provided, realizing a process that is simple and low-cost and enables high repellency sufficient to allow high-speed scanning. The developing method for immersion lithography improved by inexpensive material without introducing any new facility, a solution to be used in the developing method, and an electronic device formed by using the developing method are provided. The developing method for immersion lithography is a method of developing for immersion lithography of an electronic device with a resist containing a surface segregation agent and chemically-amplified resist, including the step of development with alkali immersion, characterized by the dissolving and removing step, conducted using a dissolving and removing solution that selectively dissolves and removes the surface segregation agent of the resist.
1. A developing method for immersion lithography of an electronic device with a resist containing a surface segregation agent, which is expressed by a general expression (1), and chemically-amplified resist component, comprising:
a step of development with alkali immersion, wherein the surface segregation agent is insoluble in the developer, and
a step of dissolving and removing, conducted using a dissolving and removing solution that selectively dissolves and removes said surface segregation agent of an upper layer portion of said resist without dissolving said chemically-amplified resist component, said general expression (1) being:
—(CH 2 —C(COOY 0 R f )R)—,
where R represents a hydrogen atom, lower alkyl group, halogen atom, or lower alkyl halide group, Y 0 represents an alkylene group, and R f represents a fluorinated alkyl group,
wherein said dissolving and removing solution comprises a mixture of at least one alcohol and at least one ether.
2. The developing method for immersion lithography according to claim 1 , wherein
said step of dissolving and removing is performed before said step of development, and conducted through rinsing or immersion.
3. The developing method for immersion lithography according to claim 1 , wherein
said step of dissolving and removing is performed simultaneously with said step of development.
4. The developing method for immersion lithography according to claim 1 , wherein
said step of dissolving and removing is performed after said step of development.
5. The developing method for immersion lithography according to claim 1 , wherein
said step of development and said step of dissolving and removing are performed using a same cup.
6. The developing method for immersion lithography according to claim 1 , wherein
said at least one alcohol has a carbon number of 4 or larger and said at least one ether is an alkyl ether having a carbon number of 5 or larger.
7. The developing method for immersion lithography according to claim 1 , wherein
said dissolving and removing solution at said step of dissolving and removing contains a fluorine-containing solvent.
8. The developing method for immersion lithography according to claim 1 , wherein
said dissolving and removing solution at said step of dissolving and removing contains water.