Solid-state imaging device and electronic apparatus

1. A solid-state imaging device comprising:

a photoelectric conversion portion;

a floating diffusion region;

a transfer gate electrode made of an n-type semiconductor;

a sidewall made of an n-type semiconductor formed on the photoelectric conversion portion side of the transfer gate electrode through an insulating film; and

a sidewall made of an insulating layer formed on the floating diffusion region side of the transfer gate electrode.

2. The solid-state imaging device according to claim 1 ,

wherein a surface of the photoelectric conversion portion under the sidewall made of the n-type semiconductor is in a pinning mode by charges which are opposite to signal charges by a gate voltage at the time of accumulating charges.

3. An electronic apparatus comprising:

a solid-state imaging device;

an optical system which guides incident light to photoelectric conversion portions of the solid-state imaging device; and

a signal processing circuit which processes output signals of the solid-state imaging device, and

wherein the solid-state imaging device includes

a photoelectric conversion portion,

a floating diffusion region,

a transfer gate electrode made of an n-type semiconductor,

a sidewall made of an n-type semiconductor formed on the photoelectric conversion portion side of the transfer gate electrode through an insulating film, and

a sidewall made of an insulating layer formed on the floating diffusion region side of the transfer gate electrode.

4. The electronic apparatus according to claim 3 ,

wherein, in the solid-state imaging device, a surface of the photoelectric conversion portion under the sidewall made of the n-type semiconductor is in a pinning mode by charges which are opposite to signal charges by a gate voltage at the time of accumulating charges.