Spin torque oscillator sensor

1. A spin torque oscillation magnetoresistive sensor, comprising:

a sensor stack comprising a magnetic free layer having a magnetization that is free to move in response to a magnetic field, a magnetic reference layer having a magnetization that is nominally pinned, and a non-magnetic layer sandwiched between the magnetic free layer and the magnetic pinned layer; and

circuitry connected with the sensor stack for applying a sense current through the sensor stack, the current resulting in an oscillation of the magnetization of one or more of the ferromagnetic layers, the oscillation having a frequency that varies in response to the presence of a magnetic field, and wherein the function of the circuitry is to measure the frequency of the oscillation based on a change in electrical resistance of the sensor stack.

2. The sensor as in claim 1 wherein the oscillation of the magnetization of the free layer is in the form of a precession about an axis.

3. The sensor as in claim 1 wherein the frequency of oscillation of the magnetization varies in response to the presence of a magnetic field, and wherein the circuitry detects the presence of the magnetic field based on a change in oscillation frequency.

4. The sensor as in claim 1 wherein the oscillation of the magnetization of the free layer is caused by spin torque induced by spin polarization of electrons traveling through the sensor stack.

5. The sensor as in claim 1 wherein the non-magnetic layer is a non-magnetic, nominally electrically insulating barrier layer, such as a material used in magnetic tunnel junctions.

6. The sensor as in claim 1 wherein the non-magnetic layer is an electrically conductive, non-magnetic material.

7. The sensor as in claim 1 wherein the reference layer has a magnetization that is pinned in a first direction, the free layer has a magnetization that is biased in a second direction that is substantially perpendicular to the first direction and the oscillation of the free layer is in the form of a precession about an axis that is parallel with the second direction, the frequency of this precessional oscillation varying in response to the presence of a magnetic field.

8. The sensor as in claim 1 wherein the reference layer has a magnetization that is pinned in a direction, the free layer has a magnetization that is biased in the same direction, and the oscillation of the free layer is in the form of a precession, the frequency of this precessional oscillation varying in response to the presence of a magnetic field.

9. A magnetoresistive sensor, comprising:

a magnetic layer having a magnetization;

first and second electrically conductive leads configured to induce an electrical current through the magnetic layer, the electrical current resulting in precessional oscillation of the magnetization of the magnetic layer, wherein the frequency of the precessional oscillation varies in response to a magnetic field.

10. A sensor as in claim 9 further comprising circuitry for detecting the change in precessional oscillation frequency in order to detect the presence of the magnetic field.

11. A sensor as in claim 9 wherein the magnetic layer is a free magnetic layer having a magnetization that is biased in predetermined direction, the sensor further comprising a pinned magnetic layer having a magnetization that is pinned, the pinned layer being separated from the free layer by a non-magnetic layer.

12. The sensor as in claim 9 wherein the precessional oscillation results from spin torque induced by the electrical current.

13. The sensor as in claim 9 wherein the frequency shift exceeds the Kittel value of ˜28 GHz/Tesla.

14. The sensor as in claim 10 wherein the free layer has an anisotropy field that exceeds a maximum field to be detected.

15. The sensor as in claim 9 wherein the precessional oscillation results in a corresponding change in electrical resistance through the sensor and wherein the circuitry for detecting the change in precessional frequency detects the change in precessional frequency by measuring this electrical resistance.

16. A magnetoresistive multisensory array, comprising:

a plurality of magnetoresistive sensor elements, each having a magnetic layer with an oscillating magnetization, each having a unique magnetic oscillation frequency, the oscillation frequency of the magnetic layer of each sensor element varying in response to a magnetic field; and

circuitry for measuring the frequency of oscillation of the magnetic layer of each sensor element.

17. The multi-sensor array as in claim 16 wherein the circuitry for measuring the frequency of oscillation of the magnetic layer of each sensor element is connected with the plurality of sensor element by a common first and second electrically conductive leads.

18. The multi-sensor array as in claim 16 further comprising first and second electrically conductive leads connected in series with each of the plurality of magnetoresistive sensor elements.

19. The multi-sensor array as in claim 18 wherein the first and second electrically conductive leads are connected with the circuitry for measuring the frequency of oscillation of the magnetic layer of each sensor element.

20. The multi-sensor array as in claim 16 further comprising first and second electrically conductive leads connected in parallel with each of the plurality of magnetoresistive sensor elements.

21. The multi-sensor array as in claim 20 further comprising first and second electrically conductive leads connected in series with each of the plurality of magnetoresistive sensor elements.