Method of fabricating interferometric devices using lift-off processing techniques
View Patent ↗Embodiments of the present disclosure include a method of fabricating interferometric devices using lift-off processing techniques. Use of lift-off processing in the fabrication of various layers of interferometric modulators, such as an optical stack or a flex layer, advantageously avoids individualized chemistries associated with the plurality of materials associated with each layer thereof. Moreover, use of lift-off processing allows much greater selection in both materials and facilities available for fabrication of interferometric modulators.
1. A method of making an interferometric modulator, comprising:
forming a lift-off stencil over a substrate;
depositing a first material layer over the lift-off stencil and over the substrate, wherein the first material layer comprises indium tin oxide;
depositing a second material layer over the first material layer, wherein the second material layer comprises molybdenum; and
removing the lift-off stencil to thereby form a patterned region comprising the second material layer over the first material layer.
2. The method of claim 1 , in which the first material layer has a thickness that is greater than a thickness of the second material layer.
3. A method of making an interferometric modulator, comprising:
forming a lift-off stencil over a substrate;
depositing a first material layer over the lift-off stencil and over the substrate;
depositing a second material layer over the first material layer;
depositing a third material layer over the second material layer, wherein the third material layer comprises a dielectric material;
depositing a fourth material layer over the third material layer, wherein the fourth material layer comprises molybdenum; and
removing the lift-off stencil to thereby form a patterned region comprising the second material layer over the first material layer.
4. The method of claim 1 , wherein the lift-off stencil comprises a polyimide release layer.
5. The method of claim 1 , wherein the thickness of the lift-off stencil is in the range of about 1,500 Å to about 50,000 Å.
6. The method of claim 1 , wherein the thickness of the first material layer is in the range of about 200 Å to about 1,000 Å.
7. The method of claim 1 , wherein the thickness of the second material layer is in the range of about 30 Å to about 150 Å.
8. The method of claim 3 , wherein the lift-off stencil comprises a polyimide release layer.
9. The method of claim 3 , wherein the thickness of the lift-off stencil is in the range of about 1,500 Å to about 50,000 Å.
10. The method of claim 3 , wherein the thickness of the first material layer is in the range of about 200 Å to about 1,000 Å.
11. The method of claim 3 , wherein the thickness of the second material layer is in the range of about 30 Å to about 150 Å.
12. The method of claim 3 , wherein the thickness of the third material layer is in the range of about 100 Å to about 2,500 Å.
13. The method of claim 3 , wherein the thickness of the fourth material layer is in the range of about 400 Å to about 6,000 Å.
14. A method of making an interferometric modulator, comprising:
forming a lift-off stencil over a substrate;
depositing a first material layer over the lift-off stencil and over the substrate, wherein the first material layer comprises indium tin oxide;
depositing a second material layer over the first material layer, wherein the second material layer comprises chromium; and
removing the lift-off stencil to thereby form a patterned region comprising the second material layer over the first material layer.
15. The method of claim 14 , wherein the lift-off stencil comprises a polyimide release layer.
16. The method of claim 14 , wherein the thickness of the lift-off stencil is in the range of about 1,500 Å to about 50,000 Å.
17. The method of claim 14 , wherein the thickness of the first material layer is in the range of about 200 Å to about 1,000 Å.
18. The method of claim 14 , wherein the thickness of the second material layer is in the range of about 30 Å to about 150 Å.