Technique for fabricating microsprings on non-planar surfaces
A processing technique facilitating the fabrication of the integrated circuit with microsprings at different vertical positions relative to a surface of a substrate is described. During the fabrication technique, microsprings are lithographically defined on surfaces of a first substrate and a second substrate. Then, a hole is created through a first substrate. Moreover, the integrated circuit may be created by rigidly mechanically coupling the two substrates to each other such that the microsprings on the surface of the second substrate are within a region defined at least in part by an edge around the hole. Subsequently, photoresist that constrains the microsprings on the surfaces of the two substrates may be removed. In this way, microsprings at the different vertical positions can be fabricated.
1. An integrated circuit, comprising:
a first substrate that includes a first surface with lithographically defined microsprings and a second surface on an opposite side of the first substrate from the first surface; and
a second substrate having a third surface, which is rigidly mechanically coupled to the second surface of the first substrate, wherein the third surface includes lithographically defined microsprings,
wherein the first surface is at a different vertical position than the third surface in the integrated circuit;
wherein the first substrate includes a hole, defined at least in part by an edge, which extends from the first surface to the second surface; and
wherein the microsprings on the third surface are within a region defined by the edge, and wherein each of the microsprings on the third surface is entirely below the first surface.
2. The integrated circuit of claim 1 , wherein the first substrate is rigidly mechanically coupled to the second substrate by lamination.
3. The integrated circuit of claim 2 , wherein the lamination includes glue, solder, silicon-water fusion or copper-to-copper fusion.
4. The integrated circuit of claim 1 , wherein the first substrate includes silicon or silicon-on-insulator; and
wherein the second substrate includes silicon or silicon-on-insulator.
5. The integrated circuit of claim 1 , wherein the difference in the vertical positions of the first surface and the third surface is greater than a depth of focus in a lithographic process used to fabricate the microsprings on the first surface and the third surface.
6. The integrated circuit of claim 1 , wherein a thickness of the first substrate is greater than 5 μm.
7. A computer system comprising an integrated circuit, wherein the integrated circuit includes:
a processor;
a memory configured to store instructions to be executed by the processor; and
a first substrate that includes a first surface with lithographically defined microsprings and a second surface on an opposite side of the first substrate from the first surface; and
a second substrate having a third surface, which is rigidly mechanically coupled to the second surface of the first substrate, wherein the third surface includes lithographically defined microsprings;
wherein the first surface is at a different vertical position than the third surface in the integrated circuit;
wherein the first substrate includes a hole, defined at least in part by an edge, which extends from the first surface to the second surface; and
wherein the microsprings on the third surface are within a region defined by the edge, and wherein each of the microsprings on the third surface is entirely below the first surface.
8. The computer system of claim 7 , wherein the first substrate is rigidly mechanically coupled to the second substrate by lamination.
9. The computer system of claim 8 , wherein the lamination includes glue, solder, silicon-water fusion or copper-to-copper fusion.
10. The computer system of claim 7 , wherein the first substrate includes silicon or silicon-on-insulator; and
wherein the second substrate includes silicon or silicon-on-insulator.
11. The computer system of claim 7 , wherein the difference in the vertical positions of the first surface and the third surface is greater than a depth of focus in a lithographic process used to fabricate the microsprings on the first surface and the third surface.