Semiconductor device
View Patent ↗A semiconductor device is provided, which includes a display portion and a driver circuit portion configured to drive the display portion. The display portion includes a first pixel electrode, a second pixel electrode, a plurality of photo sensors between the first pixel electrode and the second pixel electrode, and a plurality of color filters. The driver circuit portion includes a transistor including a single crystal semiconductor layer.
1. A semiconductor device comprising:
a display portion including a first pixel electrode, a second pixel electrode, a plurality of photo sensors between the first pixel electrode and the second pixel electrode, a first color filter overlapping with the first pixel electrode, and a second color filter overlapping with the second pixel electrode,
wherein each of the first color filter and the second color filter is overlapped with two photo sensors selected from the plurality of photo sensors, and
wherein a top-view shape of the first color filter is different from a top-view shape of the second color filter.
2. The semiconductor device according to claim 1 , wherein the plurality of photo sensors are overlapped with a wiring electrically connected to a transistor.
3. The semiconductor device according to claim 1 , wherein the display portion includes a liquid crystal element.
4. The semiconductor device according to claim 1 , wherein the display portion includes a light-emitting element.
5. The semiconductor device according to claim 1 , wherein the display portion includes a light-emitting element, and wherein the light-emitting element is overlapped with one of the first color filter and the second color filter.
6. The semiconductor device according to claim 1 , wherein each of the first color filter and the second color filter is one of a red color filter, a green color filter, and a blue color filter.
7. The semiconductor device according to claim 1 , wherein a photoelectric conversion layer of each of the plurality of photo sensors includes an amorphous semiconductor layer or a microcrystalline semiconductor layer.
8. A semiconductor device comprising:
a display portion including a first pixel electrode, a second pixel electrode, a plurality of photo sensors between the first pixel electrode and the second pixel electrode, a first color filter overlapping with the first pixel electrode, and a second color filter overlapping with the second pixel electrode; and
a driver circuit portion configured to drive the display portion,
wherein the driver circuit portion includes a transistor including a first single crystal semiconductor layer,
wherein each of the first color filter and the second color filter is overlapped with two photo sensors selected from the plurality of photo sensors,
wherein a top-view shape of the first color filter is different from a top-view shape of the second color filter, and
wherein a photoelectric conversion layer of each of the plurality of photo sensors includes a second single crystal semiconductor layer.
9. The semiconductor device according to claim 8 , wherein the plurality of photo sensors are overlapped with a wiring electrically connected to the transistor.
10. The semiconductor device according to claim 8 , wherein the display portion includes a liquid crystal element.
11. The semiconductor device according to claim 8 , wherein the display portion includes a light-emitting element.
12. The semiconductor device according to claim 8 , wherein the display portion includes a light-emitting element, and wherein the light-emitting element is overlapped with one of the first color filter and the second color filter.
13. The semiconductor device according to claim 8 , wherein each of the first color filter and the second color filter is one of a red color filter, a green color filter, and a blue color filter.
14. A semiconductor device comprising:
a display portion including a first pixel electrode, a second pixel electrode, a plurality of photo sensors between the first pixel electrode and the second pixel electrode, a first color filter overlapping with the first pixel electrode, and a second color filter overlapping with the second pixel electrode,
wherein each of the first color filter and the second color filter is overlapped with two photo sensors selected from the plurality of photo sensors.
15. The semiconductor device according to claim 14 , wherein the display portion includes a liquid crystal element.
16. The semiconductor device according to claim 14 , wherein the display portion includes a light-emitting element.
17. The semiconductor device according to claim 14 , wherein the display portion includes a light-emitting element, and wherein the light-emitting element is overlapped with one of the first color filter and the second color filter.
18. The semiconductor device according to claim 14 , wherein each of the first color filter and the second color filter is one of a red color filter, a green color filter, and a blue color filter.
19. The semiconductor device according to claim 14 , wherein a photoelectric conversion layer of each of the plurality of photo sensors includes an amorphous semiconductor layer or a microcrystalline semiconductor layer.