IP Library Granted Patent US 8,407,871
Granted Patent B2
US 8,407,871 · App. 12/498,025 · Granted Apr 2, 2013

Method of manufacturing a shapeable short-resistant capacitor

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Quick Facts
Patent No.
US 8,407,871
App. No.
12/498,025
Granted
Apr 2, 2013
Kind
B2
Abstract

A method that employs a novel combination of conventional fabrication techniques provides a ceramic short-resistant capacitor that is bendable and/or shapeable to provide a multiple layer capacitor that is extremely compact and amenable to desirable geometries. The method allows thinner and more flexible ceramic capacitors to be made. The method includes forming a first thin metal layer on a substrate; depositing a thin, ceramic dielectric layer over the metal layer; depositing a second thin metal layer over the dielectric layer to form a capacitor exhibiting a benign failure mode; and separating the capacitor from the substrate. The method may also include bending the resulting capacitor into a serpentine arrangement with gaps between the layers that allow venting of evaporated electrode material in the event of a benign failure.

Claims (14)

1. A method of making a shapeable, short-resistant capacitor, comprising:

providing a rigid substrate;

depositing a first metal layer on the substrate;

depositing a ceramic layer on the first metal layer;

depositing a second metal layer on the ceramic layer to form a short-resistant capacitor comprising the ceramic layer disposed between the first metal layer and the second metal layer;

separating the short-resistant capacitor from the substrate; and

bending the resulting short-resistant capacitor into a serpentine-arrangement with gaps between the layers that allow venting of evaporated electrode material in the event of a benign failure.

2. The method of claim 1 , wherein the substrate is comprised of quartz.

3. The method of claim 1 , wherein the first metal layer is comprised of a material selected from the group consisting of nickel, aluminum, copper, zinc, silver, gold, platinum, titanium, chrome and tungsten.

4. The method of claim 3 , wherein the first metal layer is deposited at a thickness of from about 0.1 micrometers to 500 micrometers.

5. The method of claim 1 , wherein the ceramic material is lead lanthanum zirconium titanate (PLZT).

6. The method of claim 1 , wherein the ceramic layer is deposited to a thickness of from about 0.1 micrometers to about 4 micrometers.

7. The method of claim 1 , wherein the second metal layer is deposited to a thickness of from about 0.01 micrometers to about 0.1 micrometers.

8. The method of claim 7 , wherein the second metal layer is comprised of a material selected from aluminium, platinum, copper, zinc, silver, gold and combinations of these metals.

Assignments (3)
CHANGE OF NAME Recorded Sep 18, 2024
From: DELPHI TECHNOLOGIES IP LIMITED
To: BORGWARNER US TECHNOLOGIES LLC
Reel/Frame 068985/0968 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jan 23, 2018
From: DELPHI TECHNOLOGIES, INC.
To: DELPHI TECHNOLOGIES IP LIMITED
Reel/Frame 045127/0546 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jul 6, 2009
From: TAYLOR, RALPH S.; MYERS, JOHN D.; BANEY, WILLIAM J.
To: DELPHI TECHNOLOGIES, INC.
Reel/Frame 022916/0679 →