Thin film transistor array substrate and method of fabricating the same
View Patent ↗A thin film transistor array substrate having a high charge mobility and that can raise a threshold voltage, and a method of fabricating the thin film transistor array substrate are provided. The thin film transistor array substrate includes: an insulating substrate; a gate electrode formed on the insulating substrate; an oxide semiconductor layer comprising a lower oxide layer formed on the gate electrode and an upper oxide layer formed on the lower oxide layer, such that the oxygen concentration of the upper oxide layer is higher than the oxygen concentration of the lower oxide layer; and a source electrode and a drain electrode formed on the oxide semiconductor layer and separated from each other.
1. A thin film transistor array substrate comprising:
an insulating substrate;
a gate electrode formed on the insulating substrate;
an oxide semiconductor layer comprising a lower oxide layer formed on the gate electrode, and an upper oxide layer formed on the lower oxide layer such that oxygen concentration in the upper oxide layer is higher than oxygen concentration in the lower oxide layer; and
a source electrode and a drain electrode formed on the oxide semiconductor layer and separated from each other,
wherein the source electrode and the drain electrode are formed directly on the upper oxide layer, where the upper oxide layer that is overlaid by the source and drain electrode is a homogeneous layer.
2. The thin film transistor array substrate of claim 1 , wherein the upper oxide layer has a thickness that is 60 to 80% of a total thickness of the oxide semiconductor layer.
3. The thin film transistor array substrate of claim 1 , wherein a mobility of the oxide semiconductor layer is 4.5 cm2/Vs or greater, and a threshold voltage of the oxide semiconductor layer is −4V or greater.
4. The thin film transistor array substrate of claim 1 , wherein each of the lower oxide layer and the upper oxide layer comprises an oxide of a material selected from Zn, In, Ga, Sn, Hf, and combinations thereof.
5. The thin film transistor array substrate of claim 4 , wherein the lower oxide layer and the upper oxide layer are made from the same material.
6. The thin film transistor array substrate of claim 1 , wherein an oxygen concentration at the boundary between the lower oxide layer and the upper oxide layer continuously varies.
7. The thin film transistor array substrate of claim 6 , wherein the upper oxide layer has an average oxygen concentration that is higher than an average oxygen concentration of the lower oxide layer.
8. A thin film transistor array substrate comprising:
an insulating substrate;
a gate electrode formed on the insulating substrate;
an oxide semiconductor layer comprising a lower oxide layer formed on the gate electrode, and an upper oxide layer formed on the lower oxide layer such that oxygen concentration in the upper oxide layer is higher than oxygen concentration in the lower oxide layer; and
a source electrode and a drain electrode formed on the oxide semiconductor layer and separated from each other,
wherein a lower portion of the lower oxide layer is in an amorphous state, and an upper portion of the lower oxide layer is in a crystalline state.
9. The thin film transistor array substrate of claim 8 , wherein a lower portion of the upper oxide layer is in an amorphous state, and an upper portion of the upper oxide layer is in a crystalline state.