Granted Patent B2

US 8,040,364 · App. 12/502,949 · Granted Oct 18, 2011

Abstract

Claims (62)

1. An imaging system, comprising:

an image receiving structure comprising:

a conductive substrate;

an insulating material disposed over the conductive substrate;

a plurality of tunable-resistivity cells, each tunable-resistivity cell including an opening in the insulating material; and

a conductive layer having an edge offset from an edge of the opening, wherein the edge of the conductive layer is substantially equidistant from the edge of the opening and the tunable-resistivity material is disposed between the edge of the conductive layer and the edge of the opening; and

an energy source to emit an energy beam at the image receiving structure to pattern-wise program the tunable-resistivity material.

2. An imaging system, comprising:

an image receiving structure including a tunable-resistivity material;

a plurality of electrodes coupled to the tunable-resistivity material; and

an energy source to pattern-wise program the tunable-resistivity material in a region of the image receiving structure prior to contacting the region of the image receiving structure with marking material.

3. The imaging system of claim 2 , wherein:

the image receiving structure comprises a plurality of electrodes; and

the tunable-resistivity material is electrically connected to the electrodes.

4. The imaging system of claim 3 , wherein:

the image receiving structure further comprises a substrate;

the electrodes are disposed over the substrate;

a thermally insulating layer is disposed between the electrodes; and

the tunable-resistivity material is disposed over the electrodes and the thermally insulating layer.

5. The imaging system of claim 4 , wherein at least one electrode comprises:

a first portion having a first width; and

a second portion having a second width greater than the first width;

wherein the first portion is in direct contact with the tunable-resistivity material.

6. The imaging system of claim 3 , further comprising:

a first electrode of the plurality of electrodes;

a second electrode of the plurality of electrodes; and

an outer layer disposed over the first and second electrodes;

wherein the tunable-resistivity material is disposed between the first electrode and second electrodes, and disposed under a depression in the outer layer.

7. The imaging system of claim 2 , further comprising a power supply configured to supply current only to less than all of the tunable-resistivity material at any one time.

8. The imaging system of claim 2 , wherein the image receiving structure comprises:

a first electrode; and

a second electrode over the first electrode;

wherein the tunable-resistivity material is disposed between the first electrode and the second electrode.

9. The imaging system of claim 2 , further comprising:

a second energy source to set resistivity across a portion of the tunable-resistivity material to be substantially uniform.

10. The imaging system of claim 2 , wherein the image receiving structure comprises:

a conductive substrate;

an insulating material disposed over the conductive substrate; and

the electrodes disposed over the insulating material;

wherein the tunable-resistivity material is electrically connected to both the conductive substrate and the electrode.

11. The imaging system of claim 2 , wherein the tunable-resistivity material has a bi-stable resistivity.

12. A method of transferring marking material, comprising:

pattern-wise changing an electrical resistivity of a region of a tunable-resistivity material on an image receiving structure having a plurality of electrodes coupled to the tunable-resistivity material; and

pattern-wise adhering marking material to the region of the image receiving structure in response to the electrical resistivity of the tunable-resistivity material after the pattern-wise changing.

13. The method of claim 12 , wherein pattern-wise changing the electrical resistivity of the first material comprises:

irradiating the first material with a pattern-wise modulated energy beam.

14. The method of claim 12 , wherein pattern-wise changing the electrical resistivity of the first material comprises:

pattern-wise changing a phase of the first material.

15. The method of claim 14 , wherein pattern-wise changing the phase of the first material comprises pattern-wise changing the phase of the first material between a first phase having a first resistivity and a second phase having a second resistivity different from the first resistivity.

16. The method of claim 12 , wherein pattern-wise adhering the marking material in response to the electrical resistivity of the first material comprises:

pattern-wise heating the marking material depending on the electrical resistivity of the first material.

17. The method of claim 16 , further comprising:

applying current to the first material to pattern-wise heat the first material;

pattern-wise heating an image receiving structure with the heat from the first material;

contacting the image receiving structure with the marking material from a donor structure; and

pattern-wise separating the marking material from the donor structure.

18. The method of claim 16 , wherein pattern-wise adhering the marking material in response to the electrical resistivity of the first material comprises:

applying a voltage between a first electrode and a second electrode;

wherein the first material is electrically connected to the first electrode and the second electrode.

19. The imaging system of claim 2 , further comprising:

a donor structure to place marking material in contact with the image receiving structure; and

a brush to contact one of the electrodes when the tunable-resistivity material coupled to that electrode is adjacent the marking material in contact with the image receiving structure.

Assignments (9)