Nanostructured functional coatings and devices
View Patent ↗An article including a nanostructured functional coating disposed on a substrate is described. The functional coating is characterized by both anti-reflection properties and down-converting properties. Related optoelectronic devices are also described.
1. An article, comprising:
a substrate;
a multi-layer structure disposed on a surface of the substrate; and
a nanostructured functional coating disposed on an electromagnetic radiation-receiving surface of the substrate, wherein the electromagnetic radiation-receiving surface is opposite to the surface on which the multi-layer structure is disposed, wherein the nanostructured functional coating is characterized by both anti-reflection properties and down-converting properties, wherein the nanostructured functional coating comprises an anti-reflection layer, wherein the anti-reflection layer comprises an array of nanostructures, wherein the nanostructured functional coating comprises a down-converting material present in the form of nanostructures selected from nanowires and nanorods extending substantially perpendicular to the surface of the substrate;
wherein the article is a photovoltaic device.
2. The article of claim 1 , wherein the anti-reflection layer has a uniform refractive index.
3. The article of claim 1 , wherein the anti-reflection layer has a graded refractive index in a direction substantially perpendicular to the substrate.
4. The article of claim 1 , wherein the anti-reflection layer comprises a lower region in contact with the substrate, and an upper region substantially opposite the lower region, and the refractive index of the array varies from a value, in the lower region, that substantially matches the refractive index of the substrate, to a higher value or a lower value, in a direction extending from the lower region to the upper region.
5. The article of claim 1 , wherein the anti-reflection layer comprises a transparent conductive material.
6. The article of claim 5 , wherein the transparent conductive material comprises a transparent conductive oxide, sulfide, phosphide, telluride, arsenide, nitride, or combination thereof.
7. The article of claim 1 , wherein the anti-reflection layer comprises a transparent non-conductive crystalline material.
8. The article of claim 1 , wherein the anti-reflection layer comprises a transparent non-conductive non-crystalline material.
9. The article of claim 1 , wherein the down-converting material comprises a host and a dopant.
10. The article of claim 9 , wherein the host comprises a material selected from the group consisting of oxides, sulfides, borates, phosphates, silicates, flourides and oxyflourides, nitrides and oxynitrides, halides or combinations thereof.
11. The article of claim 9 , wherein the dopant comprises a rare-earth ion, a transition metal ion, or a lanthanide ion.
12. The article of claim 1 , wherein the size of the nanostructures is in a range of from about 1 nanometer to about 500 nanometers.
13. The article of claim 12 , wherein the size of the nanostructures is in a range of from about 10 nanometers to about 100 nanometers.
14. The article of claim 1 , wherein the nanostructured functional coating comprises an anti-reflection layer; and the nanostructures are embedded within the anti-reflection layer.
15. The article of claim 1 , wherein the nanostructured functional coating comprises an anti-reflection layer; and the nanostructures are disposed below the anti-reflection layer.
16. The article of claim 1 , wherein the nanostructures in the anti-reflection layer are spaced from each other to form voids in the array of nanostructures, and down-converting nanostructures are located in substantially all of the voids of the array of nano structures.
17. The article of claim 1 , wherein the down-converting material is present in crystalline form.
18. The article of claim 17 , wherein the down-converting material comprises an array of nanostructures, each nanostructure having a substantially uniform cross-sectional area.
19. The article of claim 17 , wherein the down-converting material comprises an array of nanostructures, each nanostructure having a graded cross-sectional area.
20. An optoelectronic device, comprising:
a substrate;
a multi-layer structure disposed on a surface of the substrate; and
a nanostructured functional coating disposed on an electromagnetic radiation-receiving surface of the substrate wherein the electromagnetic radiation-receiving surface is opposite to the surface on which the multi-layer structure is disposed, wherein the nanostructured functional coating is characterized by both anti-reflection properties and down-converting properties, wherein the nanostructured functional coating comprises an anti-reflection layer, wherein the anti-reflection layer comprises an array of nanostructures, wherein the nanostructured functional coating comprises a down-converting material present in the form of nanostructures selected from nanowires and nanorods extending substantially perpendicular to the surface of the substrate;
wherein the optoelectronic device is a photovoltaic device.
21. The optoelectronic device of claim 20 , wherein the multi-layer structure comprises one selected from the group consisting of a PN-junction, a hetero-junction, a quantum well, and a superlattice.
22. An article, comprising:
a substrate;
a multi-layer structure disposed on a surface of the substrate; and
A nanostructured functional coating disposed on an electromagnetic radiation receiving surface of the substrate, wherein the electromagnetic radiation receiving surface is opposite to the surface on which the multi-layer structure is disposed, the nanostructured functional coating comprising an anti-reflection layer characterized by both anti-reflection properties and down-converting properties, the anti-reflection layer comprising an array of nanostructures comprising a down-converting material, wherein substantially all of the nanostructures extend substantially perpendicular to the surface of the substrate;
wherein the article is a photovoltaic device.
23. The article of claim 22 , wherein substantially all of the nanostructures are selected from nanowires and nanorods, such that substantially all of the nanostructures have a substantially uniform cross-sectional area.
24. The article of claim 22 , wherein substantially all of the nanostructures have a non-uniform cross-sectional area such that substantially all of the nanostructures are one of pyramidal and conical in shape.
25. The article of claim 24 , wherein substantially all of the nanostructures of pyramidal and conical shape include an internal angle between about 20 degrees and about 40 degrees.
26. The article of claim 22 , wherein the array of nanostructures is arranged periodically on the surface of the substrate with a period smaller than a wavelength of electromagnetic radiation received on the radiation receiving surface of the substrate.