Semiconductor device
View Patent ↗A semiconductor device in which potential is uniformly controlled and in which the influence of noise is reduced. A p-type well region is formed beneath a surface of a p-type Si substrate. n-type MOS transistors are formed on the p-type well region. An n-type well region is formed in the p-type Si substrate so that it surrounds the p-type well region. A plurality of conductive regions which pierce through the n-type well region are formed at regular intervals. By doing so, parasitic resistance from the p-type Si substrate, through the plurality of conductive regions, to the n-type MOS transistors becomes low. Accordingly, when back bias is applied to a contact region, the back bias potential of the n-type MOS transistors can be controlled uniformly. As a result, the influence of noise from the p-type Si substrate or the p-type well region can be reduced.
1. The semiconductor device comprising:
a semiconductor substrate of a first conduction type;
a first well region of the first conduction type formed beneath a surface of the semiconductor substrate;
transistors formed on the first well region;
a second well region of a second conduction type formed in the semiconductor substrate to surround the first well region;
a plurality of conductive regions of the first conduction type which pierce through the second well region and which are arranged so as to make parasitic resistance from the semiconductor substrate to the transistors approximately equal;
other transistors which are formed on the first well region and which are different from the transistors; and
other plural conductive regions of the first conduction type, in addition to the plurality of conductive regions, which pierce through the second well region and which are arranged so as to make parasitic resistance from the semiconductor substrate to the other transistors approximately equal.
2. The semiconductor device according to claim 1 , wherein the transistors differ from the other transistors in operation speed.
3. The semiconductor device according to claim 1 , wherein compared with the other plural conductive regions, the plurality of conductive regions are formed densely in the second well region.