Circuit materials, circuits laminates, and method of manufacture thereof
View Patent ↗A circuit substrate laminate, comprising a conductive metal layer; and a dielectric composite material having a dielectric constant of less than about 3.5 and a dissipation factor of less than about 0.006, wherein the dielectric composite material comprises: a polymer resin; and about 10 to about 70 volume percent of cenospheres having a ferric oxide content of less than or equal to 3 weight percent.
1. A circuit subassembly, comprising
a conductive layer disposed on a dielectric substrate layer, wherein the dielectric layer comprises, based on the volume of the dielectric layer,
about 30 to about 90 volume percent of a polymer matrix material, and
about 10 to about 70 volume percent of a filler component comprising a plurality of cenospheres having a ferric oxide content of about 3 weight percent or less based on the weight of the cenospheres;
wherein the circuit laminate has a dielectric constant of less than about 3.5 and a dissipation factor of less than about 0.006.
2. The circuit subassembly of claim 1 , wherein the cenospheres have a median particle diameter of 20 to 100 micrometers.
3. The circuit subassembly of claim 1 , wherein the filler component comprises 1 to 100 volume percent of the cenospheres, based on the total volume of the filler component.
4. The circuit subassembly of claim 1 , wherein the filler component comprises an additional filler, in an amount from 20 to 80 vol. %, based on the total volume of the filler component.
5. The circuit subassembly of claim 4 , wherein the additional filler is silica, fused amorphous silica, or a combination thereof.
6. The circuit subassembly of claim 4 , wherein the additional filler is alumina trihydrate, magnesium hydroxide, or a combination thereof.
7. The circuit subassembly of claim 1 , wherein the polymer matrix material comprises 1,2-polybutadiene, polyisoprene, polyetherimide, fluoropolymer, polyphenylene ether, polyimide, polyetheretherketone, polyamidimide, polyethylene terephthalate, polyethylene naphthalate, polycyclohexylene terephthalate, or combinations thereof.
8. The circuit subassembly of claim 1 , wherein the polymer matrix material is polytetrafluoroethylene.
9. The circuit subassembly of claim 1 , wherein the polymer matrix material is 1,2-polybutadiene, polyisoprene, or a combination of 1,2-polybutadiene and polyisoprene.
10. The circuit subassembly of claim 1 , wherein the polymer matrix material comprises a poly(arylene ether).
11. The circuit subassembly of claim 10 , wherein the poly(arylene ether) is carboxy-functionalized.
12. The circuit subassembly of claim 10 , further comprising a polybutadiene or polyisoprene polymer.
13. The circuit subassembly of claim 12 , wherein the polybutadiene or polyisoprene polymer is carboxy-functionalized, and comprises butadiene, isoprene, or butadiene and isoprene, and less than 50 weight percent of a co-curable monomer.
14. The circuit subassembly of claim 1 , further comprising a second conductive layer disposed on a side of the dielectric substrate layer opposite the conductive layer.
15. The circuit subassembly of claim 1 , wherein the conductive layer is a copper foil.
16. The circuit subassembly of claim 1 , wherein the conductive layer is etched to provide a circuit.
17. The circuit subassembly of claim 1 , wherein the conductive layer is in contact with the dielectric layer.
18. The circuit subassembly of claim 1 , wherein a bond ply is disposed between and in contact with the conductive layer and the dielectric substrate layer.
19. A circuit comprising the circuit subassembly of claim 1 .
20. A multi-layer circuit comprising circuit subassembly of claim 1 .
21. A method of making a circuit subassembly, the method comprising:
combining a polymer matrix material and a filler component to form a dielectric composite material;
forming a layer of the dielectric composite material, wherein the dielectric composite material comprises about 30 to about 90 volume percent of a polymer matrix material, and about 10 to about 70 volume percent of a filler component comprising a plurality of cenospheres having a ferric oxide content of about 3 weight percent or less based on the weight of the cenospheres;
disposing a conductive layer on the dielectric composite layer; and
laminating the dielectric composite layer and the conductive layer to form a circuit subassembly having a dielectric constant of less than about 3.5 and a dissipation factor of less than about 0.006.
22. The method of claim 21 , wherein the cenospheres have a median particle diameter of 20 to 100 micrometers.
23. The method of claim 21 , wherein the filler component comprises an additional filler, in an amount from 20 to 80 vol. %, based on the total volume of the filler component, wherein the additional filler is silica, fused amorphous silica, alumina trihydrate, magnesium hydroxide, or a combination thereof.
24. A circuit subassembly made by the method of claim 21 .