Semiconductor device
View Patent ↗The cell size is reduced and device reliability is improved for a semiconductor device including plural transistors making up a multi-channel output circuit. In a multi-channel circuit configuration, a group of transistors having a common function of plural channels are surrounded by a common trench for insulated isolation from another group of transistors having another function. The collectors of mutually adjacent transistors on the high side are commonly connected to a VH power supply, whereas the emitters of mutually adjacent transistors on the low side are commonly connected to a GND power supply.
1. A semiconductor device comprising:
a first group of transistors of a plurality of channels, the transistors being enclosed in a common first element isolation structure and being each laid out such that an emitter is positioned between collectors; and
a second group of transistors of a plurality of channels, the transistors being enclosed in a common second element isolation structure and being each laid out such that a collector is positioned between emitters,
wherein emitters of the first group of transistors and collectors of the second group of transistors are commonly connected to an output terminal.
2. The semiconductor device according to claim 1 ,
wherein collector regions or drain regions of the group of transistors enclosed in the common element isolation structure are connected to common first potential wiring.
3. The semiconductor device according to claim 2 ,
wherein the group of transistors of mutually adjacent channels include a common collector region or a common drain region.
4. The semiconductor device according to claim 1 ,
wherein emitter regions or source regions of the group of transistors enclosed in the common element isolation structure are connected to common second potential wiring, the second potential being lower than the first potential.
5. The semiconductor device according to claim 4 ,
wherein the group of transistors of mutually adjacent channels include a common emitter region or a common source region.
6. The semiconductor device according to claim 1 ,
wherein each of the element isolation structures is a trench isolation structure having a trench formed in a closed curve enclosing elements to be isolated from outside regions.
7. The semiconductor device according to claim 1 ,
wherein the group of transistors include a lateral insulated gate bipolar transistor.
8. The semiconductor device according to claim 1 ,
wherein the group of transistors include a field effect transistor.