Granted Patent B1

US 8,498,084 · App. 12/506,978 · Granted Jul 30, 2013

Abstract

Claims (62)

1. A magnetoresistive sensor comprising:

a pinned layer;

a barrier layer disposed over the pinned layer; and

a free layer comprising:

a first magnetic layer disposed over the barrier layer, the first magnetic layer having a positive spin polarization, a positive magnetostriction, and a polycrystalline structure; and

a second magnetic layer disposed over the first magnetic layer without having another magnetic layer disposed between the first and second magnetic layers, the second magnetic layer having a negative magnetostriction and comprising at least cobalt (Co) and boron (B).

2. The magnetoresistive sensor of claim 1 , wherein the first magnetic layer comprises at least Co and iron (Fe).

3. The magnetoresistive sensor of claim 1 , wherein the first magnetic layer comprises Co 1-y Fe y , wherein y is greater than or equal to zero and less than or equal to 1.

4. The magnetoresistive sensor of claim 3 , wherein y is at least 0.25 and not more than 0.75.

5. The magnetoresistive sensor of claim 4 wherein y is about 0.3.

6. The magnetoresistive sensor of claim 1 , wherein the spin polarization of the first magnetic layer is greater than about 0.4.

7. The magnetoresistive sensor of claim 1 , wherein a thickness of the first magnetic layer is greater than 0 Å and not more than 15 Å.

8. The magnetoresistive sensor of claim 1 , wherein the second magnetic layer comprises Co 1-z B z , wherein z is at least 0.10 and not more than 0.30.

9. The magnetoresistive sensor of claim 8 , wherein z is about 0.20.

10. The magnetoresistive sensor of claim 8 , wherein a thickness of the second magnetic layer is greater than 20 Å and not more than 70 Å.

11. The magnetoresistive sensor of claim 1 , further comprising an intermediate magnetic layer disposed between the first magnetic layer and the second magnetic layer, the intermediate magnetic layer comprising (Co 1-α Fe α ) 1-β B β , wherein:

α is at least 0.1 and not more than 0.6; and

β is at least 0.1 and not more than 0.3.

12. The magnetoresistive sensor of claim 11 , wherein a thickness of the intermediate magnetic layer is greater than 0 Å and not more than 60 Å.

13. The magnetoresistive sensor of claim 1 , wherein the second magnetic layer comprises (Co 1-γ X γ ) 1-z B z , wherein:

γ is greater than 0 and not more than 0.25;

X is selected from the group consisting of nickel (Ni), chromium (Cr), and niobium (Nb); and

z is at least 0.10 and not more than 0.30.

14. The magnetoresistive sensor of claim 13 , wherein a thickness of the second magnetic layer is greater than 20 Å and not more than 70 Å.

15. The magnetoresistive sensor of claim 1 , wherein the first and second magnetic layers are configured to minimize a Gilbert damping constant thereof.

16. The magnetoresistive sensor of claim 1 , wherein:

the first magnetic layer comprises Co 1-y Fe y ; and

the second magnetic layer comprises Co 1-z B z, , wherein:

y is about 0.7, and

z is about 0.2.

17. The magnetoresistive sensor of claim 1 , wherein the first and second magnetic layers are configured such that a net magnetostriction for the free layer is less than about 2×10 −6 .

18. The magnetoresistive sensor of claim 1 , wherein the second magnetic layer disposed on the first magnetic layer.

19. A magnetoresistive sensor comprising:

a pinned layer;

a barrier layer disposed over the pinned layer; and

a free layer comprising:

a first magnetic layer disposed over the barrier layer, the first magnetic layer having a positive spin polarization, a positive magnetostriction, and a polycrystalline structure; and

a second magnetic layer disposed over the first magnetic layer, the second magnetic layer having a negative magnetostriction, a magnetization greater than 600 emu/cm 3 , and a Gilbert damping constant less than 0.02.

20. The magnetoresistive sensor of claim 19 , wherein the first magnetic layer comprises Co 1-y Fe y , wherein y is greater than or equal to zero and less than or equal to 1.

21. The magnetoresistive sensor of claim 19 , wherein the second magnetic layer comprises (Co 1-γ X γ ) 1-z B z , wherein:

γ is greater than zero and not more than 0.25;

X is selected from a group consisting from nickel (Ni), chromium (Cr), and niobium (Nb); and

z is at least 0.10 and not more than 0.30.

22. The magnetoresistive sensor of claim 19 further comprising an intermediate magnetic layer disposed between the first magnetic layer and the second magnetic layer, the intermediate magnetic layer comprising (Co 1-α Fe α ) 1-β B β , wherein:

α is at least 0.1 and not more than 0.6; and

β is at least 0.1 and not more than 0.3.

23. A method of producing a magnetoresistive sensor, the method comprising:

providing a structure comprising a pinned layer and a barrier layer over the pinned layer;

forming a first magnetic layer over the barrier layer, the first magnetic layer having a positive spin polarization, a positive magnetostriction, and a polycrystalline structure; and

forming a second magnetic layer over the first magnetic layer without having another magnetic layer disposed between the first and second magnetic layers, the second magnetic layer having a negative magnetostriction and comprising at least cobalt (Co) and boron (B).

24. The method of claim 23 , wherein the first magnetic layer comprises Co 1-y Fe y , wherein y is greater than or equal to zero and less than or equal to 1.

25. The method of claim 23 , wherein the second magnetic layer comprises (Co 1-γ X γ ) 1-z B z , wherein:

γ is greater than 0 and not more than 0.25;

X is selected from the group consisting of nickel (Ni), chromium (Cr), and niobium (Nb); and

z is at least 0.10 and not more than 0.30.

26. The method of claim 23 further comprising forming an intermediate magnetic layer between the first magnetic layer and the second magnetic layer, the intermediate magnetic layer comprising (Co 1-α Fe α ) 1-β B β , wherein:

α is at least 0.1 and not more than 0.6; and

β is at least 0.1 and not more than 0.3.

27. The method of claim 23 , wherein the first and second magnetic layers are configured such that a net magnetostriction for the free layer is less than about 2×10 −6 .

28. The method of claim 23 , wherein the first and second magnetic layers are configured to minimize a damping constant thereof.

29. The method of claim 23 further comprising annealing a structure comprising the pinned layer, the barrier layer, and the first and second magnetic layers.

30. The method of claim 23 , wherein the second magnetic layer is formed on the first magnetic layer.

Assignments (9)