Photovoltaic devices including Mg-doped semiconductor films
View Patent ↗A photovoltaic cell can include a dopant in contact with a semiconductor layer.
1. A photovoltaic cell comprising:
a transparent conductive layer; and
a first semiconductor layer comprising CdS in direct physical contact with the transparent conductive layer, the first semiconductor layer doped with magnesium.
2. The photovoltaic cell of claim 1 , wherein the first semiconductor layer has a thickness of between about 200-3000 Angstroms.
3. The photovoltaic cell of claim 1 , wherein first semiconductor layer is doped with 1-20% magnesium.
4. The photovoltaic cell of claim 1 , wherein the transparent conductive layer is positioned over a substrate.
5. The photovoltaic cell of claim 1 , wherein the transparent conductive layer is positioned over the first semiconductor layer.
6. The photovoltaic cell of claim 1 , further comprising a second semiconductor layer in contact with the first semiconductor layer.
7. The photovoltaic cell of claim 6 , wherein the second semiconductor layer comprises CdTe.
8. The photovoltaic cell of claim 6 , wherein the second semiconductor layer is cadmium chloride-treated CdTe.
9. A system for generating electrical energy comprising:
a transparent conductive layer;
a first semiconductor layer comprising CdS in direct physical contact with the transparent conductive layer, the first semiconductor layer doped with magnesium;
a first electrical connection connected to a transparent conductive layer; and
a second electrical connection connected to a back metal electrode adjacent to a second semiconductor layer.
10. The system of claim 9 , wherein first semiconductor layer includes is doped with 1-20% magnesium.
11. The system of claim 9 , wherein the transparent conductive layer is positioned over a substrate.
12. A photovoltaic cell comprising:
a transparent conductive layer positioned over a substrate;
a first semiconductor layer in direct physical contact with the transparent conductive layer, the first semiconductor layer comprising cadmium sulfide doped with magnesium; and
a second semiconductor layer including cadmium telluride in contact with the first semiconductor layer.
13. The photovoltaic cell of claim 12 , wherein the first semiconductor layer has a thickness of between about 200-3000 Angstroms.
14. The photovoltaic cell of claim 12 , wherein first semiconductor layer is doped with 1-20% magnesium.
15. The photovoltaic cell of claim 12 , wherein the cadmium telluride is cadmium chloride-treated CdTe.