Semiconductor device and method for manufacturing same
View Patent ↗A base layer is formed on an insulating substrate, and a semiconductor layer is formed in localized fashion thereon. A gate insulating film is then formed so as to cover the semiconductor layer, and a gate electrode is formed on a portion of the gate insulating film. An impurity is then implanted into the semiconductor layer via the gate insulating film, and a source region, a drain region, and an LDD region are formed. The gate insulating film is etched with dilute hydrofluoric acid. An electrode-protecting insulating film is then formed so as to cover the gate electrode, and the entire surface of the surface layer portion of the electrode-protecting insulating film is etched away using dilute hydrofluoric acid. Carrier traps introduced into the electrode-protecting insulating film and the gate insulating film are thereby removed.
1. A method for manufacturing a semiconductor device, comprising:
forming a semiconductor layer in localized fashion on a substrate;
forming a gate insulating film on the semiconductor layer;
forming a gate electrode in a portion of the area 25 directly above said semiconductor layer on the gate insulating film;
forming an electrode-protecting insulating film on said gate insulating film and said gate electrode; terminating said semiconductor layer; and
washing said electrode-protecting insulating film with a washing solution capable of etching the electrode-protecting insulating film to etch away the surface layer portion of the electrode-protecting insulating film.
2. The method for manufacturing a semiconductor device according to claim 1 , wherein said step for etching away the surface layer portion of the electrode-protecting insulating film comprises dripping a washing solution capable of etching said electrode-protecting insulating film onto said electrode-protecting insulating film while said substrate is rotated.
3. The method for manufacturing a semiconductor device according to claim 1 , wherein an aqueous solution containing hydrogen fluoride is used as the washing solution capable of etching said electrode-protecting insulating film.
4. The method for manufacturing a semiconductor device according to claim 1 , comprising a step for washing said electrode-protecting insulating film with functional water prior to said step for washing the electrode-protecting insulating film with a washing solution capable of etching the electrode-protecting insulating film.
5. The method for manufacturing a semiconductor device according to claim 4 , wherein hydrogenated water, ozonated water, or carbonated water is used as said functional water.
6. The method for manufacturing a semiconductor device according to claim 4 , comprising a step for radiating ultraviolet rays to said electrode-protecting insulating film prior to said step for washing the electrode-protecting insulating film with functional water.
7. The method for manufacturing a semiconductor device according to claim 1 , comprising a step for implanting an impurity into said semiconductor layer and a step for washing said gate insulating film with a washing solution capable of etching the gate insulating film, subsequent to the step for forming said gate electrode.
8. The method for manufacturing a semiconductor device according to claim 7 , wherein a washing is performed until the value of the ratio (B/A) has a value of from 0.01 to 0.65 in said washing step, where A is the film thickness of the portion positioned in the area directly under said gate electrode in said gate insulating film, and B is the difference between the film thickness of the portion positioned in the area directly under the gate electrode and the film thickness of the portion other than said area directly under the gate electrode.
9. The method for manufacturing a semiconductor device according to claim 7 , wherein washing is performed in said washing step until the concentration of metal on the surface of said gate insulating film is 1×10 11 atoms/cm 2 or less.
10. The method for manufacturing a semiconductor device according to claim 9 , wherein said metal is one or more types of metal selected from the group consisting of Al, Cr, Mo, W, Nb, Ta, and Nd.
11. The method for manufacturing a semiconductor device according to claim 7 , wherein the step for implanting an impurity into said semiconductor layer involves forming a source region, a drain region, and an LDD region in said semiconductor layer; and washing is performed in said washing step until the ratio (Dtr/C LDD ) has a value of 0.4 or less, where Dtr is the surface density of carrier traps in the area directly above said LDD region of said gate insulating film, and C LDD is the volumetric concentration of carriers in said LDD region.
12. A method for manufacturing a semiconductor device, comprising:
forming a semiconductor layer in localized fashion on a substrate;
forming a gate insulating film on the semiconductor layer;
forming a gate electrode in a portion of the area directly above said semiconductor layer on the gate insulating film;
implanting an impurity into said semiconductor layer;
washing said gate insulating film with a washing solution capable of etching the gate insulating film; and
forming an electrode-protecting insulating film on said gate insulating film and said gate electrode; wherein
washing is performed in said washing step until the concentration of metal on the surface of said gate insulating film is 1×10 11 atoms/cm 2 or less.
13. A method for manufacturing a semiconductor device, comprising:
forming a semiconductor layer in localized fashion on a substrate;
forming a gate insulating film on the semiconductor layer;
forming a gate electrode in a portion of the area directly above said semiconductor layer on the gate insulating film;
implanting an impurity into said semiconductor layer to form a source region, a drain region, and an LDD region in said semiconductor layer and
washing said gate insulating film with a washing solution capable of etching the gate insulating film; wherein
washing is performed in said washing step until the ratio (Dtr/C LDD ) has a value of 0.4 or less, where Dtr is the surface density of carrier traps in the area directly above said LDD region of said gate insulating film, and C LDD is the volumetric concentration of carriers in said LDD region.
14. The method for manufacturing a semiconductor device according to claim 7 , wherein said step for washing the gate insulating film has a step for dripping a washing solution capable of etching said gate insulating film onto said gate insulating firm where said substrate is rotated.
15. The method for manufacturing a semiconductor device according to claim 12 , wherein said step for washing the gate insulating film has a step for dripping a washing solution capable of etching said gate insulating film onto said gate insulating film where said substrate is rotated.
16. The method for manufacturing a semiconductor device according to claim 13 , wherein said step for washing the gate insulating film has a step for dripping a washing solution capable of etching said gate insulating film onto said gate insulating film where said substrate is rotated.
17. The method for manufacturing a semiconductor device according to claim 7 , wherein an aqueous solution containing hydrogen fluoride is used as the washing solution capable of etching said gate insulating film.
18. The method for manufacturing a semiconductor device according to claim 12 , wherein an aqueous solution containing hydrogen fluoride is used as the washing solution capable of etching said gate insulating film.
19. The method for manufacturing a semiconductor device according to claim 13 , wherein an aqueous solution containing hydrogen fluoride is used as the washing solution capable of etching said gate insulating film.
20. The method for manufacturing a semiconductor device according to claim 7 , comprising a step for washing said gate insulating film with functional water prior to said step for washing the gate insulating film with a washing solution capable of etching the gate insulating film.
21. The method for manufacturing a semiconductor device according to claim 12 , comprising a step for washing said gate insulating film with functional water prior to said step for washing the gate insulating film with a washing solution capable of etching the gate insulating film.
22. The method for manufacturing a semiconductor device according to claim 13 , comprising a step for washing said gate insulating film with functional water prior to said step for washing the gate insulating film with a washing solution capable of etching the gate insulating film.
23. The method for manufacturing a semiconductor device according to claim 20 , wherein hydrogenated water, ozonated water, or carbonated water is used as said functional water.
24. The method for manufacturing a semiconductor device according to claim 21 , wherein hydrogenated water, ozonated water, or carbonated water is used as said functional water.
25. The method for manufacturing a semiconductor device according to claim 22 , wherein hydrogenated water, ozonated water, or carbonated water is used as said functional water.
26. The method for manufacturing a semiconductor device according to claim 20 , comprising a step for radiating ultraviolet rays to said gate insulating film prior to said step for washing the gate insulating film with functional water.
27. The method for manufacturing a semiconductor device according to claim 21 , comprising a step for radiating ultraviolet rays to said gate insulating film prior to said step for washing the gate insulating film with functional water.
28. The method for manufacturing a semiconductor device according to claim 22 , comprising a step for radiating ultraviolet rays to said gate insulating film prior to said step for washing the gate insulating film with functional water.