Solid-state image sensing device including solid-state image sensor having a pillar-shaped semiconductor layer
It is an object to provide a CCD solid-state image sensor, in which an area of a read channel is reduced and a rate of a surface area of a light receiving portion (photodiode) to an area of one pixel is increased. There is provided a solid-state image sensor, including: a first conductive type semiconductor layer; a first conductive type pillar-shaped semiconductor layer formed on the first conductive type semiconductor layer; a second conductive type photoelectric conversion region formed on the top of the first conductive type pillar-shaped semiconductor layer, an electric charge amount of the photoelectric conversion region being changed by light; and a high-concentrated impurity region of the first conductive type formed on a surface of the second conductive type photoelectric conversion region, the impurity region being spaced apart from a top end of the first conductive type pillar-shaped semiconductor layer by a predetermined distance, wherein a transfer electrode is formed on the side of the first conductive type pillar-shaped semiconductor layer via a gate insulating film, a second conductive type CCD channel region is formed below the transfer electrode, and a read channel is formed in a region between the second conductive type photoelectric conversion region and the second conductive type CCD channel region.
1. A solid-state image sensor, comprising:
a first conductivity-type semiconductor layer;
a first conductivity-type pillar-shaped semiconductor layer overlying the first conductivity-type semiconductor layer;
a second conductivity-type photoelectric conversion region formed on a top of the first conductivity-type pillar-shaped semiconductor layer, wherein an electric charge in the photoelectric conversion region is light-reactive; and
a highly-concentrated impurity region of the first conductivity-type overlying a surface of the second conductivity-type photoelectric conversion region, the highly-concentrated impurity region being spaced apart from a top end of the first conductivity-type pillar-shaped semiconductor layer by a predetermined distance;
a transfer electrode adjacent to a side of the first conductivity-type pillar-shaped semiconductor layer and separated therefrom by a gate insulating film;
a second conductivity-type CCD channel region underlies the transfer electrode; and
a read channel within the first conductivity-type pillar-shaped semiconductor layer in a region between the second conductivity-type photoelectric conversion region and the second conductivity-type CCD channel region.
2. A solid-state image sensing device comprising a plurality of solid-state image sensors according to claim 1 arranged in a matrix pattern.
3. The solid-state image sensing device according to claim 2 , wherein the second conductivity-type CCD channel region comprises a second conductivity-type impurity region extending in a column direction at least in respective portions between adjacent columns of the first conductivity-type pillar-shaped semiconductor layers, and an isolation region comprising highly concentrated impurities of the first conductivity-type structured so that the respective portions of the second conductivity-type CCD channel region are electrically isolated from each other.
4. The solid-state image sensing device according to claim 3 , wherein a plurality of transfer electrodes including the transfer electrodes on the side of the first conductivity-type pillar-shaped semiconductor layer extend in a row direction, in respective portions between adjacent rows of the first conductivity-type pillar-shaped semiconductor layers, and are arranged at a predetermined spacing so as to transfer a signal charge generated in the solid-state image sensor along the second conductivity-type CCD channel region.
5. A solid-state image sensing device, wherein a plurality of sets of the columns of solid-state image sensors, in which a first column of solid-state image sensors having a plurality of solid-state image sensors according to claim 1 are arranged in a first direction at a first spacing and a second column of solid-state image sensors having a plurality of solid-state image sensors according to claim 1 are arranged in the first direction at the first spacing and are displaced by a predetermined amount in the first direction with respect to the first column of solid-state image sensors and are displacedly arranged at a second spacing and are displacedly arranged by a predetermined amount in the first direction at the second spacing.
6. The solid-state image sensing device according to claim 5 , wherein the second conductivity-type CCD channel region is composed of a second conductivity-type impurity region which extends in the column direction passing through and between respective pillar-shaped semiconductor layers of the adjacent columns of the first conductivity-type pillar-shaped semiconductor layers, at least in respective portions between the adjacent columns of the pillar-shaped semiconductor layers, and an isolation region comprising highly-concentration impurities of the first conductivity-type arranged so that the second conductivity-type CCD channel regions are electrically isolated from each other.
7. The solid-state image sensing device according to claim 6 , wherein the transfer electrodes extend in the row direction passing through and between respective pillar-shaped semiconductor layers of the adjacent rows of the pillar-shaped semiconductor layers, in respective portions between adjacent rows of the pillar-shaped semiconductor layers, and are arranged at a predetermined spacing so as to transfer a signal charge generated in the solid-state image sensor along the second conductivity-type CCD channel region.
8. A solid-state image sensor comprising:
a laterally-oriented semiconductor layer of a first conductivity-type;
a vertically-oriented pillar-shaped semiconductor layer of the first conductivity-type overlying the semiconductor layer;
a photoelectric conversion region of a second conductivity-type overlies an upper surface of the pillar-shaped semiconductor layer, wherein the photoelectric conversion region comprises a light-reactive electric charge; and
a highly-concentrated impurity region of the first conductivity-type partially encapsulating the photoelectric conversion region and spaced apart from an upper end of the pillar-shaped semiconductor layer by a portion of the photoelectric conversion region;
a transfer electrode adjacent to side surfaces of the pillar-shaped semiconductor layer and separated therefrom by a gate insulating film;
a CCD channel region of the second conductivity-type between the transfer electrode the laterally-oriented semiconductor layer; and
a read channel within the pillar-shaped semiconductor layer in a region intermediate to the photoelectric conversion region and the CCD channel region.
9. The solid-state image sensing device comprising a plurality of solid-state image sensors according to claim 8 and arranged in a matrix pattern of orthogonal rows and columns, wherein the CCD channel region comprises a region extending in a column direction at least in respective portions between adjacent columns of the pillar-shaped semiconductor layers, and an isolation region comprising highly concentrated impurities of the first conductivity-type is structured such that the respective portions of the CCD channel region are electrically isolated from each other.
10. A solid-state image sensing device comprising a plurality of solid-state image sensors according to claim 8 and arranged in a honeycomb pattern of rows and columns in which a first column of solid-state image sensors are arranged in a first direction at a first spacing and a second column of solid-state image sensors are arranged in the first direction at the first spacing and are offset by a predetermined amount in the first direction with respect to solid-state image sensors in the first column and in which a first row of solid-state image sensors are arranged in a second direction at a the first spacing and a second row of solid-state image sensors are arranged in the second direction at the first spacing and are offset by a predetermined amount in the second direction with respect to solid-state image sensors in the first row.